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Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications
dc.creator | Campa, Andrej | |
dc.creator | Berginc, Marko | |
dc.creator | Vojisavljević, Katarina | |
dc.creator | Malic, Barbara | |
dc.creator | Panjan, Peter | |
dc.creator | Topic, Marko | |
dc.date.accessioned | 2022-04-05T15:07:13Z | |
dc.date.available | 2022-04-05T15:07:13Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0040-6090 | |
dc.identifier.uri | http://rimsi.imsi.bg.ac.rs/handle/123456789/1033 | |
dc.description.abstract | In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C. | en |
dc.publisher | Elsevier Science Sa, Lausanne | |
dc.relation | Slovenian Research AgencySlovenian Research Agency - Slovenia [J2-5466, P2-0197] | |
dc.rights | restrictedAccess | |
dc.source | Thin Solid Films | |
dc.subject | Transparent conductive oxide | en |
dc.subject | Refractive index | en |
dc.subject | Radio-frequency sputtering | en |
dc.subject | Post-annealing | en |
dc.subject | Optical simulations | en |
dc.subject | Gallium-doped indium tin oxide | en |
dc.title | Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications | en |
dc.type | article | |
dc.rights.license | ARR | |
dc.citation.epage | 57 | |
dc.citation.other | 621: 52-57 | |
dc.citation.rank | M22 | |
dc.citation.spage | 52 | |
dc.citation.volume | 621 | |
dc.identifier.doi | 10.1016/j.tsf.2016.11.028 | |
dc.identifier.scopus | 2-s2.0-84997541858 | |
dc.identifier.wos | 000392681900010 | |
dc.type.version | publishedVersion |