In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/impro...ved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.
Keywords:
Transparent conductive oxide / Refractive index / Radio-frequency sputtering / Post-annealing / Optical simulations / Gallium-doped indium tin oxide
Source:
Thin Solid Films, 2017, 621, 52-57
Publisher:
Elsevier Science Sa, Lausanne
Funding / projects:
Slovenian Research AgencySlovenian Research Agency - Slovenia [J2-5466, P2-0197]
TY - JOUR
AU - Campa, Andrej
AU - Berginc, Marko
AU - Vojisavljević, Katarina
AU - Malic, Barbara
AU - Panjan, Peter
AU - Topic, Marko
PY - 2017
UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/1033
AB - In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.
PB - Elsevier Science Sa, Lausanne
T2 - Thin Solid Films
T1 - Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications
EP - 57
SP - 52
VL - 621
DO - 10.1016/j.tsf.2016.11.028
ER -
@article{
author = "Campa, Andrej and Berginc, Marko and Vojisavljević, Katarina and Malic, Barbara and Panjan, Peter and Topic, Marko",
year = "2017",
abstract = "In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Thin Solid Films",
title = "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications",
pages = "57-52",
volume = "621",
doi = "10.1016/j.tsf.2016.11.028"
}
Campa, A., Berginc, M., Vojisavljević, K., Malic, B., Panjan, P.,& Topic, M.. (2017). Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films
Elsevier Science Sa, Lausanne., 621, 52-57.
https://doi.org/10.1016/j.tsf.2016.11.028
Campa A, Berginc M, Vojisavljević K, Malic B, Panjan P, Topic M. Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films. 2017;621:52-57.
doi:10.1016/j.tsf.2016.11.028 .
Campa, Andrej, Berginc, Marko, Vojisavljević, Katarina, Malic, Barbara, Panjan, Peter, Topic, Marko, "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications" in Thin Solid Films, 621 (2017):52-57,
https://doi.org/10.1016/j.tsf.2016.11.028 . .
