Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications
Само за регистроване кориснике
2017
Аутори
Campa, AndrejBerginc, Marko
Vojisavljević, Katarina
Malic, Barbara
Panjan, Peter
Topic, Marko
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/impro...ved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.
Кључне речи:
Transparent conductive oxide / Refractive index / Radio-frequency sputtering / Post-annealing / Optical simulations / Gallium-doped indium tin oxideИзвор:
Thin Solid Films, 2017, 621, 52-57Издавач:
- Elsevier Science Sa, Lausanne
Финансирање / пројекти:
- Slovenian Research AgencySlovenian Research Agency - Slovenia [J2-5466, P2-0197]
DOI: 10.1016/j.tsf.2016.11.028
ISSN: 0040-6090
WoS: 000392681900010
Scopus: 2-s2.0-84997541858
Институција/група
Institut za multidisciplinarna istraživanjaTY - JOUR AU - Campa, Andrej AU - Berginc, Marko AU - Vojisavljević, Katarina AU - Malic, Barbara AU - Panjan, Peter AU - Topic, Marko PY - 2017 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/1033 AB - In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C. PB - Elsevier Science Sa, Lausanne T2 - Thin Solid Films T1 - Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications EP - 57 SP - 52 VL - 621 DO - 10.1016/j.tsf.2016.11.028 ER -
@article{ author = "Campa, Andrej and Berginc, Marko and Vojisavljević, Katarina and Malic, Barbara and Panjan, Peter and Topic, Marko", year = "2017", abstract = "In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.", publisher = "Elsevier Science Sa, Lausanne", journal = "Thin Solid Films", title = "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications", pages = "57-52", volume = "621", doi = "10.1016/j.tsf.2016.11.028" }
Campa, A., Berginc, M., Vojisavljević, K., Malic, B., Panjan, P.,& Topic, M.. (2017). Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films Elsevier Science Sa, Lausanne., 621, 52-57. https://doi.org/10.1016/j.tsf.2016.11.028
Campa A, Berginc M, Vojisavljević K, Malic B, Panjan P, Topic M. Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films. 2017;621:52-57. doi:10.1016/j.tsf.2016.11.028 .
Campa, Andrej, Berginc, Marko, Vojisavljević, Katarina, Malic, Barbara, Panjan, Peter, Topic, Marko, "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications" in Thin Solid Films, 621 (2017):52-57, https://doi.org/10.1016/j.tsf.2016.11.028 . .