TY  - CONF
AU  - Čampa, Andrej
AU  - Berginc, Marko
AU  - Vojisavljević, Katarina
AU  - Malič, Barbara
AU  - Panjan, Peter
AU  - Topič, Marko
PY  - 2015
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2893
AB  - In the optoelectronics, especially in thin-film photovoltaics, the transparent conductive oxides (TCO) play an important role to minimize the front contact optical losses. The TCOs used as a front contact needs to have low resistivity (<1 mOhmcm), high optical transparency in the broad wavelength region (>80% at 400-1000 nm) and high temperature stability. In the case of using nano-imprinted lithography for reproduction of the morphologies the good electrical and optical properties should be obtained at low deposition or post-annealed temperatures. To translate the morphology, at which the light is efficiently scattered, to the internal interfaces of the solar cells very low thickness of TCO is required (<200 nm). One of such candidates is Ga doped SnO2:In (ITO), which exhibits better optical and similar electrical properties to ITO 90/10, additionally it has lower indium content. A multicomponent Ga-In-Sn oxide target with Ga:In:Sn = 4:64:32 metal ratio was prepared, that was used in RF sputtering system for deposition of high quality GITO thin-film layers on glass. In this study, we will focus on electrical (specific resistivity, mobility and carrier concentration) and optical properties (thickness and refractive index) as a function of deposition and annealing parameters. The results of optical and electrical characterization of the two best GITOs will be presented, one globally optimized and one optimized with the respect to the low temperature deposition prerequisite.
C3  - 2015 E-MRS Fall Meeting and Exhibit
T1  - Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions
UR  - https://hdl.handle.net/21.15107/rcub_rimsi_2893
ER  - 

@conference{
author = "Čampa, Andrej and Berginc, Marko and Vojisavljević, Katarina and Malič, Barbara and Panjan, Peter and Topič, Marko",
year = "2015",
abstract = "In the optoelectronics, especially in thin-film photovoltaics, the transparent conductive oxides (TCO) play an important role to minimize the front contact optical losses. The TCOs used as a front contact needs to have low resistivity (<1 mOhmcm), high optical transparency in the broad wavelength region (>80% at 400-1000 nm) and high temperature stability. In the case of using nano-imprinted lithography for reproduction of the morphologies the good electrical and optical properties should be obtained at low deposition or post-annealed temperatures. To translate the morphology, at which the light is efficiently scattered, to the internal interfaces of the solar cells very low thickness of TCO is required (<200 nm). One of such candidates is Ga doped SnO2:In (ITO), which exhibits better optical and similar electrical properties to ITO 90/10, additionally it has lower indium content. A multicomponent Ga-In-Sn oxide target with Ga:In:Sn = 4:64:32 metal ratio was prepared, that was used in RF sputtering system for deposition of high quality GITO thin-film layers on glass. In this study, we will focus on electrical (specific resistivity, mobility and carrier concentration) and optical properties (thickness and refractive index) as a function of deposition and annealing parameters. The results of optical and electrical characterization of the two best GITOs will be presented, one globally optimized and one optimized with the respect to the low temperature deposition prerequisite.",
journal = "2015 E-MRS Fall Meeting and Exhibit",
title = "Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions",
url = "https://hdl.handle.net/21.15107/rcub_rimsi_2893"
}

Čampa, A., Berginc, M., Vojisavljević, K., Malič, B., Panjan, P.,& Topič, M.. (2015). Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions. in 2015 E-MRS Fall Meeting and Exhibit.
https://hdl.handle.net/21.15107/rcub_rimsi_2893

Čampa A, Berginc M, Vojisavljević K, Malič B, Panjan P, Topič M. Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions. in 2015 E-MRS Fall Meeting and Exhibit. 2015;.
https://hdl.handle.net/21.15107/rcub_rimsi_2893 .

Čampa, Andrej, Berginc, Marko, Vojisavljević, Katarina, Malič, Barbara, Panjan, Peter, Topič, Marko, "Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions" in 2015 E-MRS Fall Meeting and Exhibit (2015),
https://hdl.handle.net/21.15107/rcub_rimsi_2893 .