Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions
Аутори
Čampa, AndrejBerginc, Marko
Vojisavljević, Katarina
Malič, Barbara
Panjan, Peter
Topič, Marko
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
In the optoelectronics, especially in thin-film photovoltaics, the transparent conductive oxides (TCO) play an important role to minimize the front contact optical losses. The TCOs used as a front contact needs to have low resistivity (<1 mOhmcm), high optical transparency in the broad wavelength region (>80% at 400-1000 nm) and high temperature stability. In the case of using nano-imprinted lithography for reproduction of the morphologies the good electrical and optical properties should be obtained at low deposition or post-annealed temperatures. To translate the morphology, at which the light is efficiently scattered, to the internal interfaces of the solar cells very low thickness of TCO is required (<200 nm). One of such candidates is Ga doped SnO2:In (ITO), which exhibits better optical and similar electrical properties to ITO 90/10, additionally it has lower indium content. A multicomponent Ga-In-Sn oxide target with Ga:In:Sn = 4:64:32 metal ratio was prepared, that was used in ...RF sputtering system for deposition of high quality GITO thin-film layers on glass. In this study, we will focus on electrical (specific resistivity, mobility and carrier concentration) and optical properties (thickness and refractive index) as a function of deposition and annealing parameters. The results of optical and electrical characterization of the two best GITOs will be presented, one globally optimized and one optimized with the respect to the low temperature deposition prerequisite.
Кључне речи:
TCO / Ga doped SnO2:In / electrical properties / optical properties / RF sputteringИзвор:
2015 E-MRS Fall Meeting and Exhibit, 2015Институција/група
Institut za multidisciplinarna istraživanjaTY - CONF AU - Čampa, Andrej AU - Berginc, Marko AU - Vojisavljević, Katarina AU - Malič, Barbara AU - Panjan, Peter AU - Topič, Marko PY - 2015 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/2893 AB - In the optoelectronics, especially in thin-film photovoltaics, the transparent conductive oxides (TCO) play an important role to minimize the front contact optical losses. The TCOs used as a front contact needs to have low resistivity (<1 mOhmcm), high optical transparency in the broad wavelength region (>80% at 400-1000 nm) and high temperature stability. In the case of using nano-imprinted lithography for reproduction of the morphologies the good electrical and optical properties should be obtained at low deposition or post-annealed temperatures. To translate the morphology, at which the light is efficiently scattered, to the internal interfaces of the solar cells very low thickness of TCO is required (<200 nm). One of such candidates is Ga doped SnO2:In (ITO), which exhibits better optical and similar electrical properties to ITO 90/10, additionally it has lower indium content. A multicomponent Ga-In-Sn oxide target with Ga:In:Sn = 4:64:32 metal ratio was prepared, that was used in RF sputtering system for deposition of high quality GITO thin-film layers on glass. In this study, we will focus on electrical (specific resistivity, mobility and carrier concentration) and optical properties (thickness and refractive index) as a function of deposition and annealing parameters. The results of optical and electrical characterization of the two best GITOs will be presented, one globally optimized and one optimized with the respect to the low temperature deposition prerequisite. C3 - 2015 E-MRS Fall Meeting and Exhibit T1 - Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions UR - https://hdl.handle.net/21.15107/rcub_rimsi_2893 ER -
@conference{ author = "Čampa, Andrej and Berginc, Marko and Vojisavljević, Katarina and Malič, Barbara and Panjan, Peter and Topič, Marko", year = "2015", abstract = "In the optoelectronics, especially in thin-film photovoltaics, the transparent conductive oxides (TCO) play an important role to minimize the front contact optical losses. The TCOs used as a front contact needs to have low resistivity (<1 mOhmcm), high optical transparency in the broad wavelength region (>80% at 400-1000 nm) and high temperature stability. In the case of using nano-imprinted lithography for reproduction of the morphologies the good electrical and optical properties should be obtained at low deposition or post-annealed temperatures. To translate the morphology, at which the light is efficiently scattered, to the internal interfaces of the solar cells very low thickness of TCO is required (<200 nm). One of such candidates is Ga doped SnO2:In (ITO), which exhibits better optical and similar electrical properties to ITO 90/10, additionally it has lower indium content. A multicomponent Ga-In-Sn oxide target with Ga:In:Sn = 4:64:32 metal ratio was prepared, that was used in RF sputtering system for deposition of high quality GITO thin-film layers on glass. In this study, we will focus on electrical (specific resistivity, mobility and carrier concentration) and optical properties (thickness and refractive index) as a function of deposition and annealing parameters. The results of optical and electrical characterization of the two best GITOs will be presented, one globally optimized and one optimized with the respect to the low temperature deposition prerequisite.", journal = "2015 E-MRS Fall Meeting and Exhibit", title = "Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions", url = "https://hdl.handle.net/21.15107/rcub_rimsi_2893" }
Čampa, A., Berginc, M., Vojisavljević, K., Malič, B., Panjan, P.,& Topič, M.. (2015). Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions. in 2015 E-MRS Fall Meeting and Exhibit. https://hdl.handle.net/21.15107/rcub_rimsi_2893
Čampa A, Berginc M, Vojisavljević K, Malič B, Panjan P, Topič M. Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions. in 2015 E-MRS Fall Meeting and Exhibit. 2015;. https://hdl.handle.net/21.15107/rcub_rimsi_2893 .
Čampa, Andrej, Berginc, Marko, Vojisavljević, Katarina, Malič, Barbara, Panjan, Peter, Topič, Marko, "Ga doped ITO transparent conductive oxide: Optical and electrical properties at different deposition conditions" in 2015 E-MRS Fall Meeting and Exhibit (2015), https://hdl.handle.net/21.15107/rcub_rimsi_2893 .