Приказ основних података о документу

dc.creatorMisković, Goran
dc.creatorAleksić, Obrad
dc.creatorNikolić, Maria Vesna
dc.creatorNicolics, Johann
dc.creatorRadosavljević, Goran
dc.creatorVasiljević, Zorka Z
dc.creatorLuković, Miloljub
dc.creatorSmetana, Walter
dc.date.accessioned2022-04-05T15:02:42Z
dc.date.available2022-04-05T15:02:42Z
dc.date.issued2016
dc.identifier.isbn978-1-5108-2227-6
dc.identifier.issn1757-8981
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/966
dc.description.abstractThis research is focused on structural and electrical characterisation of tin oxide (SnO2) applied as a thick film and investigation of its properties as gas sensitive material. Micron sized SnO2 powder was milled in an agate mill for six hours to fabricate SnO2 nanopowder, which was afterwards sieved by 325 mesh sieve and characterized by XRD and SEM. This powder was used as functional part in the production of thick film tin oxide paste containing a resin vehicle with 4 wt. % nanosize glass frits acting as permanent binder. The glass frits where additionally milled for twelve hours in the agate mills to nanosized powder and sieved by a 325 mesh sieve as well. The achieved thick film paste was screen printed on alumina and fired at 850 degrees C peak temperature for 10 minutes in air. After the sintering process, thick film samples where characterized by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The reflectivity was measured on the same samples by UV-VIS spectrophotometer: the band gap was determined from the slope of reflectance. After that a matrix of different interdigitated electrode structure of PdAg paste was printed and sintered using the mentioned sintering conditions. The tin oxide thick film was printed over the interdigitated electrodes as a top layer and sintered again under the same conditions. The total electrical resistance was measured as a function of the electrode spacing and temperature. A negative temperature coefficient (NTC) was identified and measured in the range from room temperature (27 degrees C) to 180 degrees C in a climate chamber. Finally the samples were placed into a gas reactor with NOx and CO gas and the resistance was measured in the same temperature range (27 degrees C-200 degrees C).en
dc.publisherIOP Publishing Ltd, Bristol
dc.rightsopenAccess
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.source5th International Conference on Materials and Applications for Sensors and Transducers (Ic-Mast2015)
dc.subjectSnO2
dc.subjectgas sensor
dc.subjectthick films
dc.titleNanostructured SnO2 thick films for gas sensor application: analysis of structural and electronic propertiesen
dc.typeconferenceObject
dc.rights.licenseBY
dc.citation.other108: -
dc.citation.volume108
dc.identifier.doi10.1088/1757-899X/108/1/012003
dc.identifier.fulltexthttp://rimsi.imsi.bg.ac.rs/bitstream/id/1106/963.pdf
dc.identifier.scopus2-s2.0-84964774508
dc.identifier.wos000376204700003
dc.type.versionpublishedVersion


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Приказ основних података о документу