A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The layers deposited under optimized conditions were then post-annealed at different temperatures (200 - 500 degrees C) either in the air or in nitrogen atmosphere in order to further improve the conductivity. The deposited 200 nm thick GITO layer has high electron mobility (50 cm(2)/Vs) at relatively low resistivity (0.90 m Omega cm) although the free electron concentration is kept low (1.4x10(20) cm(-3)) to prevent excessive free-carrier absorption. Thus, high transmission of the layer (similar to 80% at 400 - 1500 nm) is obtained.
Keywords:
Transparent conductive oxide / RF sputtering / post-annealing / Ga doped ITO
Source:
Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct, 2015, 84, 183-189
TY - CONF
AU - Berginc, Marko
AU - Campa, Andrej
AU - Vojisavljević, Katarina
AU - Malic, Barbara
AU - Panjan, Peter
AU - Topic, Marko
PY - 2015
UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/913
AB - A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The layers deposited under optimized conditions were then post-annealed at different temperatures (200 - 500 degrees C) either in the air or in nitrogen atmosphere in order to further improve the conductivity. The deposited 200 nm thick GITO layer has high electron mobility (50 cm(2)/Vs) at relatively low resistivity (0.90 m Omega cm) although the free electron concentration is kept low (1.4x10(20) cm(-3)) to prevent excessive free-carrier absorption. Thus, high transmission of the layer (similar to 80% at 400 - 1500 nm) is obtained.
PB - Elsevier Science Bv, Amsterdam
C3 - Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct
T1 - Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide
EP - 189
SP - 183
VL - 84
DO - 10.1016/j.egypro.2015.12.312
ER -
@conference{
author = "Berginc, Marko and Campa, Andrej and Vojisavljević, Katarina and Malic, Barbara and Panjan, Peter and Topic, Marko",
year = "2015",
abstract = "A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The layers deposited under optimized conditions were then post-annealed at different temperatures (200 - 500 degrees C) either in the air or in nitrogen atmosphere in order to further improve the conductivity. The deposited 200 nm thick GITO layer has high electron mobility (50 cm(2)/Vs) at relatively low resistivity (0.90 m Omega cm) although the free electron concentration is kept low (1.4x10(20) cm(-3)) to prevent excessive free-carrier absorption. Thus, high transmission of the layer (similar to 80% at 400 - 1500 nm) is obtained.",
publisher = "Elsevier Science Bv, Amsterdam",
journal = "Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct",
title = "Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide",
pages = "189-183",
volume = "84",
doi = "10.1016/j.egypro.2015.12.312"
}
Berginc, M., Campa, A., Vojisavljević, K., Malic, B., Panjan, P.,& Topic, M.. (2015). Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide. in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct
Elsevier Science Bv, Amsterdam., 84, 183-189.
https://doi.org/10.1016/j.egypro.2015.12.312
Berginc M, Campa A, Vojisavljević K, Malic B, Panjan P, Topic M. Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide. in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct. 2015;84:183-189.
doi:10.1016/j.egypro.2015.12.312 .
Berginc, Marko, Campa, Andrej, Vojisavljević, Katarina, Malic, Barbara, Panjan, Peter, Topic, Marko, "Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide" in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct, 84 (2015):183-189,
https://doi.org/10.1016/j.egypro.2015.12.312 . .
