PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrar...ed and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.
Source:
Advances in Materials Science and Engineering, 2015, 2015
TY - JOUR
AU - Nikolić, Pantelija M.
AU - Paraskevopoulos, K.M.
AU - Zorba, T.T.
AU - Vasiljević, Zorka Z
AU - Pavlidou, E.
AU - Vujatović, Stevan S.
AU - Blagojević, Vladimir
AU - Aleksić, Obrad
AU - Bojicic, Aleksandar
AU - Nikolić, Maria Vesna
PY - 2015
UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/824
AB - PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.
PB - Hindawi Ltd, London
T2 - Advances in Materials Science and Engineering
T1 - Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications
VL - 2015
DO - 10.1155/2015/283782
ER -
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, K.M. and Zorba, T.T. and Vasiljević, Zorka Z and Pavlidou, E. and Vujatović, Stevan S. and Blagojević, Vladimir and Aleksić, Obrad and Bojicic, Aleksandar and Nikolić, Maria Vesna",
year = "2015",
abstract = "PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.",
publisher = "Hindawi Ltd, London",
journal = "Advances in Materials Science and Engineering",
title = "Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications",
volume = "2015",
doi = "10.1155/2015/283782"
}
Nikolić, P. M., Paraskevopoulos, K.M., Zorba, T.T., Vasiljević, Z. Z., Pavlidou, E., Vujatović, S. S., Blagojević, V., Aleksić, O., Bojicic, A.,& Nikolić, M. V.. (2015). Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications. in Advances in Materials Science and Engineering
Hindawi Ltd, London., 2015.
https://doi.org/10.1155/2015/283782
Nikolić PM, Paraskevopoulos K, Zorba T, Vasiljević ZZ, Pavlidou E, Vujatović SS, Blagojević V, Aleksić O, Bojicic A, Nikolić MV. Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications. in Advances in Materials Science and Engineering. 2015;2015.
doi:10.1155/2015/283782 .
Nikolić, Pantelija M., Paraskevopoulos, K.M., Zorba, T.T., Vasiljević, Zorka Z, Pavlidou, E., Vujatović, Stevan S., Blagojević, Vladimir, Aleksić, Obrad, Bojicic, Aleksandar, Nikolić, Maria Vesna, "Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications" in Advances in Materials Science and Engineering, 2015 (2015),
https://doi.org/10.1155/2015/283782 . .
