Приказ основних података о документу

dc.creatorPopov, Igor
dc.creatorMantega, Mauro
dc.creatorNarayan, Awadhesh
dc.creatorSanvito, Stefano
dc.date.accessioned2022-04-05T14:49:59Z
dc.date.available2022-04-05T14:49:59Z
dc.date.issued2014
dc.identifier.issn1098-0121
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/775
dc.description.abstractThe appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of forming topologically protected interfaces between different materials. Here we propose that a topological phase can be transferred to graphene by proximity with the three-dimensional topological insulator Bi2Se3. By using density functional and transport theory, we prove that, at the verge of the chemical bond formation, a hybrid state forms at the graphene/Bi2Se3 interface. The state has Dirac-cone-like dispersion at the Gamma point and a well defined helical spin texture, indicating its topologically protected nature. This demonstrates that proximity can transfer the topological phase from Bi2Se3 to graphene.en
dc.publisherAmer Physical Soc, College Pk
dc.relationScience Foundation of Ireland (SFI)Science Foundation Ireland [07/IN.1/I945]
dc.relationIrish Research CouncilIrish Research Council for Science, Engineering and Technology
dc.rightsrestrictedAccess
dc.sourcePhysical Review B
dc.subjectgraphene / topological insulators / density functional theory / transport properties / electronic properties
dc.titleProximity-induced topological state in grapheneen
dc.typearticle
dc.rights.licenseARR
dc.citation.issue3
dc.citation.other90(3): -
dc.citation.rankM21
dc.citation.volume90
dc.identifier.doi10.1103/PhysRevB.90.035418
dc.identifier.scopus2-s2.0-84904625769
dc.identifier.wos000339445400005
dc.type.versionpublishedVersion


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Приказ основних података о документу