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dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, K.M.
dc.creatorAleksić, Obrad
dc.creatorVujatović, Stevan S
dc.creatorVasiljević-Radović, Dana
dc.creatorZorba, T.T.
dc.creatorBlagojević, V.
dc.creatorNikolić, Nenad
dc.creatorRadovanović, M.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2022-04-05T14:39:48Z
dc.date.available2022-04-05T14:39:48Z
dc.date.issued2012
dc.identifier.issn1842-6573
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/621
dc.description.abstractSingle crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.en
dc.publisherNational Institute of Optoelectronics
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45007/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45014/RS//
dc.rightsrestrictedAccess
dc.sourceOptoelectronics and Advanced Materials, Rapid Communications
dc.subjectPhotoacoustic Characterizationen
dc.subjectFar Infrared Reflectivityen
dc.subjectDoped Semiconductorsen
dc.titleFar infrared and photoacoustic characterization of iodine doped PbTeen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage356
dc.citation.issue3-4
dc.citation.other6(3-4): 352-356
dc.citation.rankM23
dc.citation.spage352
dc.citation.volume6
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_cer_942
dc.identifier.scopus2-s2.0-84861152092
dc.identifier.wos000304431000002
dc.type.versionpublishedVersion


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