Electrical properties of niobium doped barium bismuth-titanate ceramics
Abstract
BaBi4Ti4-5/4xNbxO15 (BBNTx, x = 0.0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20-777 degrees C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T-c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of similar to 204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of sigma(DC) was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively.
Keywords:
Layered compounds / Impedance spectroscopy / Dielectric properties / CeramicsSource:
Materials Research Bulletin, 2012, 47, 8, 1874-1880Publisher:
- Pergamon-Elsevier Science Ltd, Oxford
Funding / projects:
- Synthesis of nanopowders and processing of ceramics and nanocomposites with specific electric and magnetic properties for application in integrated passive components (RS-45021)
- Lithuanian Research Funding Institution - Faculty of Physics, Vilnius
- COSTEuropean Cooperation in Science and Technology (COST) [MP 0904]
DOI: 10.1016/j.materresbull.2012.04.069
ISSN: 0025-5408
WoS: 000305779900007
Scopus: 2-s2.0-84861591124
Collections
Institution/Community
Institut za multidisciplinarna istraživanjaTY - JOUR AU - Bobić, Jelena AU - Vijatović Petrović, Mirjana AU - Banys, J AU - Stojanović, Biljana D PY - 2012 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/615 AB - BaBi4Ti4-5/4xNbxO15 (BBNTx, x = 0.0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20-777 degrees C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T-c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of similar to 204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of sigma(DC) was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively. PB - Pergamon-Elsevier Science Ltd, Oxford T2 - Materials Research Bulletin T1 - Electrical properties of niobium doped barium bismuth-titanate ceramics EP - 1880 IS - 8 SP - 1874 VL - 47 DO - 10.1016/j.materresbull.2012.04.069 ER -
@article{ author = "Bobić, Jelena and Vijatović Petrović, Mirjana and Banys, J and Stojanović, Biljana D", year = "2012", abstract = "BaBi4Ti4-5/4xNbxO15 (BBNTx, x = 0.0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20-777 degrees C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T-c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of similar to 204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of sigma(DC) was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively.", publisher = "Pergamon-Elsevier Science Ltd, Oxford", journal = "Materials Research Bulletin", title = "Electrical properties of niobium doped barium bismuth-titanate ceramics", pages = "1880-1874", number = "8", volume = "47", doi = "10.1016/j.materresbull.2012.04.069" }
Bobić, J., Vijatović Petrović, M., Banys, J.,& Stojanović, B. D.. (2012). Electrical properties of niobium doped barium bismuth-titanate ceramics. in Materials Research Bulletin Pergamon-Elsevier Science Ltd, Oxford., 47(8), 1874-1880. https://doi.org/10.1016/j.materresbull.2012.04.069
Bobić J, Vijatović Petrović M, Banys J, Stojanović BD. Electrical properties of niobium doped barium bismuth-titanate ceramics. in Materials Research Bulletin. 2012;47(8):1874-1880. doi:10.1016/j.materresbull.2012.04.069 .
Bobić, Jelena, Vijatović Petrović, Mirjana, Banys, J, Stojanović, Biljana D, "Electrical properties of niobium doped barium bismuth-titanate ceramics" in Materials Research Bulletin, 47, no. 8 (2012):1874-1880, https://doi.org/10.1016/j.materresbull.2012.04.069 . .