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Designing Electrical Contacts to MoS2 Monolayers: A Computational Study

Authorized Users Only
2012
Authors
Popov, Igor
Seifert, Gotthard
Tomanek, David
Article (Published version)
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Abstract
Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promising potential in flexible nanoelectronics, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of MoS2/metal contacts, we perform ab initio density functional theory calculations for the geometry, bonding, and electronic structure of the contact region. We find that the most common contact metal (Au) is rather inefficient for electron injection into single-layer MoS2 and propose Ti as a representative example of suitable alternative electrode materials.
Source:
Physical Review Letters, 2012, 108, 15
Publisher:
  • Amer Physical Soc, College Pk
Funding / projects:
  • National Science FoundationNational Science Foundation (NSF) [EEC-0832785]
  • European Research Council (ERC)European Research Council (ERC) [INTIF 226639]
  • Science Foundation of Ireland (SFI)Science Foundation Ireland
  • CRANNScience Foundation Ireland

DOI: 10.1103/PhysRevLett.108.156802

ISSN: 0031-9007

PubMed: 22587274

WoS: 000302638900006

Scopus: 2-s2.0-84859795935
[ Google Scholar ]
463
URI
http://rimsi.imsi.bg.ac.rs/handle/123456789/516
Collections
  • Radovi istraživača / Researchers’ publications
Institution/Community
Institut za multidisciplinarna istraživanja
TY  - JOUR
AU  - Popov, Igor
AU  - Seifert, Gotthard
AU  - Tomanek, David
PY  - 2012
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/516
AB  - Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promising potential in flexible nanoelectronics, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of MoS2/metal contacts, we perform ab initio density functional theory calculations for the geometry, bonding, and electronic structure of the contact region. We find that the most common contact metal (Au) is rather inefficient for electron injection into single-layer MoS2 and propose Ti as a representative example of suitable alternative electrode materials.
PB  - Amer Physical Soc, College Pk
T2  - Physical Review Letters
T1  - Designing Electrical Contacts to MoS2 Monolayers: A Computational Study
IS  - 15
VL  - 108
DO  - 10.1103/PhysRevLett.108.156802
ER  - 
@article{
author = "Popov, Igor and Seifert, Gotthard and Tomanek, David",
year = "2012",
abstract = "Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promising potential in flexible nanoelectronics, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of MoS2/metal contacts, we perform ab initio density functional theory calculations for the geometry, bonding, and electronic structure of the contact region. We find that the most common contact metal (Au) is rather inefficient for electron injection into single-layer MoS2 and propose Ti as a representative example of suitable alternative electrode materials.",
publisher = "Amer Physical Soc, College Pk",
journal = "Physical Review Letters",
title = "Designing Electrical Contacts to MoS2 Monolayers: A Computational Study",
number = "15",
volume = "108",
doi = "10.1103/PhysRevLett.108.156802"
}
Popov, I., Seifert, G.,& Tomanek, D.. (2012). Designing Electrical Contacts to MoS2 Monolayers: A Computational Study. in Physical Review Letters
Amer Physical Soc, College Pk., 108(15).
https://doi.org/10.1103/PhysRevLett.108.156802
Popov I, Seifert G, Tomanek D. Designing Electrical Contacts to MoS2 Monolayers: A Computational Study. in Physical Review Letters. 2012;108(15).
doi:10.1103/PhysRevLett.108.156802 .
Popov, Igor, Seifert, Gotthard, Tomanek, David, "Designing Electrical Contacts to MoS2 Monolayers: A Computational Study" in Physical Review Letters, 108, no. 15 (2012),
https://doi.org/10.1103/PhysRevLett.108.156802 . .

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