Far infrared study of local impurity modes of Boron-doped PbTe
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2012
Authors
Nikolić, Pantelija M.
Paraskevopoulos, K.M.
Zachariadis, G
Valasiadis, O
Zorba, T.T.
Vujatović, Stevan S
Nikolić, Nenad

Aleksić, Obrad
Ivetić, Tamara B.
Cvetković, Olga G
Blagojević, Vladimir D
Nikolić, Maria Vesna

Article (Published version)

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PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
Keywords:
PbTe / Boron / far infrared spectroscopySource:
Journal of Materials Science, 2012, 47, 5, 2384-2389Publisher:
- Springer, New York
Funding / projects:
DOI: 10.1007/s10853-011-6057-8
ISSN: 0022-2461
WoS: 000299081500045
Scopus: 2-s2.0-84857647432
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Institut za multidisciplinarna istraživanjaTY - JOUR AU - Nikolić, Pantelija M. AU - Paraskevopoulos, K.M. AU - Zachariadis, G AU - Valasiadis, O AU - Zorba, T.T. AU - Vujatović, Stevan S AU - Nikolić, Nenad AU - Aleksić, Obrad AU - Ivetić, Tamara B. AU - Cvetković, Olga G AU - Blagojević, Vladimir D AU - Nikolić, Maria Vesna PY - 2012 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/507 AB - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed. PB - Springer, New York T2 - Journal of Materials Science T1 - Far infrared study of local impurity modes of Boron-doped PbTe EP - 2389 IS - 5 SP - 2384 VL - 47 DO - 10.1007/s10853-011-6057-8 ER -
@article{ author = "Nikolić, Pantelija M. and Paraskevopoulos, K.M. and Zachariadis, G and Valasiadis, O and Zorba, T.T. and Vujatović, Stevan S and Nikolić, Nenad and Aleksić, Obrad and Ivetić, Tamara B. and Cvetković, Olga G and Blagojević, Vladimir D and Nikolić, Maria Vesna", year = "2012", abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.", publisher = "Springer, New York", journal = "Journal of Materials Science", title = "Far infrared study of local impurity modes of Boron-doped PbTe", pages = "2389-2384", number = "5", volume = "47", doi = "10.1007/s10853-011-6057-8" }
Nikolić, P. M., Paraskevopoulos, K.M., Zachariadis, G., Valasiadis, O., Zorba, T.T., Vujatović, S. S., Nikolić, N., Aleksić, O., Ivetić, T. B., Cvetković, O. G., Blagojević, V. D.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science Springer, New York., 47(5), 2384-2389. https://doi.org/10.1007/s10853-011-6057-8
Nikolić PM, Paraskevopoulos K, Zachariadis G, Valasiadis O, Zorba T, Vujatović SS, Nikolić N, Aleksić O, Ivetić TB, Cvetković OG, Blagojević VD, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389. doi:10.1007/s10853-011-6057-8 .
Nikolić, Pantelija M., Paraskevopoulos, K.M., Zachariadis, G, Valasiadis, O, Zorba, T.T., Vujatović, Stevan S, Nikolić, Nenad, Aleksić, Obrad, Ivetić, Tamara B., Cvetković, Olga G, Blagojević, Vladimir D, Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389, https://doi.org/10.1007/s10853-011-6057-8 . .