Preparation of TiO2 and ZnO thin films by dip-coating method

Abstract

TiO2 and ZnO thin films were prepared by dip-coating method from TiCl4, and Zn(NO3)(2) precursor solutions, respectively. Basic parameters of the process such as temperature of thermal treatment, heating and cooling regimes, and number of cycles required for obtaining uniformly coated substrates were defined. Microstructural analysis showed that at least 20 cycles must be repeated to obtain a completely covered substrate and continual film of TiO2 at 823 K. In the case of TiO2 film thermally treated at 723 K even n=30 was not enough to produce a continual film. Preparation of continual film of ZnO requires at least n=22, at 773 K. Microstructure and roughness of the prepared films were investigated by AFM method.