Приказ основних података о документу

dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, K.M.
dc.creatorVujatović, Stevan S
dc.creatorNikolić, Maria Vesna
dc.creatorChatzistavrou, X.
dc.creatorPavlidou, E.
dc.creatorIvetić, Tamara B.
dc.creatorBlagojević, V.
dc.creatorBojicic, Aleksandar
dc.creatorDinulović, D.
dc.date.accessioned2022-04-05T14:21:10Z
dc.date.available2022-04-05T14:21:10Z
dc.date.issued2009
dc.identifier.issn0925-8388
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/339
dc.description.abstractSingle crystal samples of PbTe and PbSnTe doped with Cr were made using the Bridgman technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1 at.% Cr and also of Pb(0.9)Sn(0.1)Te doped with 0.4 at.%, 0.7 at.% and 1.1 at.% Cr are presented and numerically analyzed. Local modes were determined at about 260 cm(-1) and 480 cm(-1) for PbTe doped with Cr and at slightly higher frequencies for PbSnTe doped with Cr. The origin of the local modes was discused about the possible application of the PbSnTe + Cr alloys.en
dc.publisherElsevier Science Sa, Lausanne
dc.relationSerbian Academy of Sciences and Arts
dc.rightsrestrictedAccess
dc.sourceJournal of Alloys and Compounds
dc.subjectSemiconductorsen
dc.subjectOptical spectroscopyen
dc.subjectImpurities in semiconductorsen
dc.titleOptical properties of PbTe and PbSnTe doped with Cren
dc.typearticle
dc.rights.licenseARR
dc.citation.epage896
dc.citation.issue2
dc.citation.other480(2): 893-896
dc.citation.rankaM21
dc.citation.spage893
dc.citation.volume480
dc.identifier.doi10.1016/j.jallcom.2009.02.067
dc.identifier.scopus2-s2.0-67349266629
dc.identifier.wos000267798600152
dc.type.versionpublishedVersion


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Приказ основних података о документу