TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition
Autori
Počuča-Nešić, MilicaBranković, Goran
Bernik, Slavko
Rečnik, Aleksander
Vasiljevic-Radovic, Dana
Branković, Zorica
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature
range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films
were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were
spin coated onto Si-substrates with amorphous layer of SiO2
. Deposited layers were thermally treated from the
substrate side with low heating rate (1 °/min) up to 700 °C and finally annealed for 10 hours. Results of AFM
and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped
grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin.
EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation.
It was concluded that the presence of SiO2
layer on Si substrate prevents epitaxial or oriented growth of LNO.
Ključne reči:
lanthanum nickelate / films / electron microscopy / microstructureIzvor:
Processing and Application of Ceramics, 2012, 6, 2, 103-107Izdavač:
- University of Novi Sad
Finansiranje / projekti:
- 0-3D nanostrukture za primenu u elektronici i obnovljivim izvorima energije: sinteza, karakterizacija i procesiranje (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-45007)
Institucija/grupa
Institut za multidisciplinarna istraživanjaTY - JOUR AU - Počuča-Nešić, Milica AU - Branković, Goran AU - Bernik, Slavko AU - Rečnik, Aleksander AU - Vasiljevic-Radovic, Dana AU - Branković, Zorica PY - 2012 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/2964 AB - Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2 . Deposited layers were thermally treated from the substrate side with low heating rate (1 °/min) up to 700 °C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO. PB - University of Novi Sad T2 - Processing and Application of Ceramics T1 - TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition EP - 107 IS - 2 SP - 103 VL - 6 DO - 10.2298/PAC1202103P ER -
@article{ author = "Počuča-Nešić, Milica and Branković, Goran and Bernik, Slavko and Rečnik, Aleksander and Vasiljevic-Radovic, Dana and Branković, Zorica", year = "2012", abstract = "Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2 . Deposited layers were thermally treated from the substrate side with low heating rate (1 °/min) up to 700 °C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.", publisher = "University of Novi Sad", journal = "Processing and Application of Ceramics", title = "TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition", pages = "107-103", number = "2", volume = "6", doi = "10.2298/PAC1202103P" }
Počuča-Nešić, M., Branković, G., Bernik, S., Rečnik, A., Vasiljevic-Radovic, D.,& Branković, Z.. (2012). TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition. in Processing and Application of Ceramics University of Novi Sad., 6(2), 103-107. https://doi.org/10.2298/PAC1202103P
Počuča-Nešić M, Branković G, Bernik S, Rečnik A, Vasiljevic-Radovic D, Branković Z. TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition. in Processing and Application of Ceramics. 2012;6(2):103-107. doi:10.2298/PAC1202103P .
Počuča-Nešić, Milica, Branković, Goran, Bernik, Slavko, Rečnik, Aleksander, Vasiljevic-Radovic, Dana, Branković, Zorica, "TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition" in Processing and Application of Ceramics, 6, no. 2 (2012):103-107, https://doi.org/10.2298/PAC1202103P . .