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dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, K.M.
dc.creatorVujatović, Stevan S
dc.creatorBojicic, Aleksandar
dc.creatorZorba, T.T.
dc.creatorNikolić, Maria Vesna
dc.creatorStamenović, B.
dc.creatorIvetić, Tamara B.
dc.creatorBlagojević, V.
dc.date.accessioned2022-04-05T14:15:04Z
dc.date.available2022-04-05T14:15:04Z
dc.date.issued2008
dc.identifier.issn0022-2461
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/250
dc.description.abstractFar infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.en
dc.publisherSpringer, New York
dc.rightsrestrictedAccess
dc.sourceJournal of Materials Science
dc.subjectPbTe
dc.subjectBi
dc.subjectfar infrared spectroscopy
dc.titleFar infrared properties of PbTe doped with Bismuthen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage5520
dc.citation.issue16
dc.citation.other43(16): 5516-5520
dc.citation.rankM22
dc.citation.spage5516
dc.citation.volume43
dc.identifier.doi10.1007/s10853-008-2821-9
dc.identifier.scopus2-s2.0-49149122176
dc.identifier.wos000258573900014
dc.type.versionpublishedVersion


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Приказ основних података о документу