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Far infrared properties of PbTe doped with Bismuth

Authorized Users Only
2008
Authors
Nikolić, Pantelija M.
Paraskevopoulos, K.M.
Vujatović, Stevan S
Bojicic, Aleksandar
Zorba, T.T.
Nikolić, Maria Vesna
Stamenović, B.
Ivetić, Tamara B.
Blagojević, V.
Article (Published version)
Metadata
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Abstract
Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.
Keywords:
PbTe / Bi / far infrared spectroscopy
Source:
Journal of Materials Science, 2008, 43, 16, 5516-5520
Publisher:
  • Springer, New York

DOI: 10.1007/s10853-008-2821-9

ISSN: 0022-2461

WoS: 000258573900014

Scopus: 2-s2.0-49149122176
[ Google Scholar ]
URI
http://rimsi.imsi.bg.ac.rs/handle/123456789/250
Collections
  • Radovi istraživača / Researchers’ publications
Institution/Community
Institut za multidisciplinarna istraživanja
TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, K.M.
AU  - Vujatović, Stevan S
AU  - Bojicic, Aleksandar
AU  - Zorba, T.T.
AU  - Nikolić, Maria Vesna
AU  - Stamenović, B.
AU  - Ivetić, Tamara B.
AU  - Blagojević, V.
PY  - 2008
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/250
AB  - Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.
PB  - Springer, New York
T2  - Journal of Materials Science
T1  - Far infrared properties of PbTe doped with Bismuth
EP  - 5520
IS  - 16
SP  - 5516
VL  - 43
DO  - 10.1007/s10853-008-2821-9
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, K.M. and Vujatović, Stevan S and Bojicic, Aleksandar and Zorba, T.T. and Nikolić, Maria Vesna and Stamenović, B. and Ivetić, Tamara B. and Blagojević, V.",
year = "2008",
abstract = "Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.",
publisher = "Springer, New York",
journal = "Journal of Materials Science",
title = "Far infrared properties of PbTe doped with Bismuth",
pages = "5520-5516",
number = "16",
volume = "43",
doi = "10.1007/s10853-008-2821-9"
}
Nikolić, P. M., Paraskevopoulos, K.M., Vujatović, S. S., Bojicic, A., Zorba, T.T., Nikolić, M. V., Stamenović, B., Ivetić, T. B.,& Blagojević, V.. (2008). Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science
Springer, New York., 43(16), 5516-5520.
https://doi.org/10.1007/s10853-008-2821-9
Nikolić PM, Paraskevopoulos K, Vujatović SS, Bojicic A, Zorba T, Nikolić MV, Stamenović B, Ivetić TB, Blagojević V. Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science. 2008;43(16):5516-5520.
doi:10.1007/s10853-008-2821-9 .
Nikolić, Pantelija M., Paraskevopoulos, K.M., Vujatović, Stevan S, Bojicic, Aleksandar, Zorba, T.T., Nikolić, Maria Vesna, Stamenović, B., Ivetić, Tamara B., Blagojević, V., "Far infrared properties of PbTe doped with Bismuth" in Journal of Materials Science, 43, no. 16 (2008):5516-5520,
https://doi.org/10.1007/s10853-008-2821-9 . .

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