Far infrared properties of PbTe doped with Bismuth
Authorized Users Only
2008
Authors
Nikolić, Pantelija M.
Paraskevopoulos, K.M.
Vujatović, Stevan S
Bojicic, Aleksandar
Zorba, T.T.
Nikolić, Maria Vesna

Stamenović, B.
Ivetić, Tamara B.
Blagojević, V.
Article (Published version)

Metadata
Show full item recordAbstract
Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.
Keywords:
PbTe / Bi / far infrared spectroscopySource:
Journal of Materials Science, 2008, 43, 16, 5516-5520Publisher:
- Springer, New York
DOI: 10.1007/s10853-008-2821-9
ISSN: 0022-2461
WoS: 000258573900014
Scopus: 2-s2.0-49149122176
Collections
Institution/Community
Institut za multidisciplinarna istraživanjaTY - JOUR AU - Nikolić, Pantelija M. AU - Paraskevopoulos, K.M. AU - Vujatović, Stevan S AU - Bojicic, Aleksandar AU - Zorba, T.T. AU - Nikolić, Maria Vesna AU - Stamenović, B. AU - Ivetić, Tamara B. AU - Blagojević, V. PY - 2008 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/250 AB - Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot. PB - Springer, New York T2 - Journal of Materials Science T1 - Far infrared properties of PbTe doped with Bismuth EP - 5520 IS - 16 SP - 5516 VL - 43 DO - 10.1007/s10853-008-2821-9 ER -
@article{ author = "Nikolić, Pantelija M. and Paraskevopoulos, K.M. and Vujatović, Stevan S and Bojicic, Aleksandar and Zorba, T.T. and Nikolić, Maria Vesna and Stamenović, B. and Ivetić, Tamara B. and Blagojević, V.", year = "2008", abstract = "Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm(-1) which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot.", publisher = "Springer, New York", journal = "Journal of Materials Science", title = "Far infrared properties of PbTe doped with Bismuth", pages = "5520-5516", number = "16", volume = "43", doi = "10.1007/s10853-008-2821-9" }
Nikolić, P. M., Paraskevopoulos, K.M., Vujatović, S. S., Bojicic, A., Zorba, T.T., Nikolić, M. V., Stamenović, B., Ivetić, T. B.,& Blagojević, V.. (2008). Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science Springer, New York., 43(16), 5516-5520. https://doi.org/10.1007/s10853-008-2821-9
Nikolić PM, Paraskevopoulos K, Vujatović SS, Bojicic A, Zorba T, Nikolić MV, Stamenović B, Ivetić TB, Blagojević V. Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science. 2008;43(16):5516-5520. doi:10.1007/s10853-008-2821-9 .
Nikolić, Pantelija M., Paraskevopoulos, K.M., Vujatović, Stevan S, Bojicic, Aleksandar, Zorba, T.T., Nikolić, Maria Vesna, Stamenović, B., Ivetić, Tamara B., Blagojević, V., "Far infrared properties of PbTe doped with Bismuth" in Journal of Materials Science, 43, no. 16 (2008):5516-5520, https://doi.org/10.1007/s10853-008-2821-9 . .