The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
Authors
Mitrović, Jelena
Rapljenović, Željko
Počuča-Nešić, Milica
Ivek, Tomislav
Branković, Zorica

Branković, Goran

Article (Published version)
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The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x=0.00 and 0.08)
ceramic samples on their electrical properties was investigated in the temperature range of 300–4K.
X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen
vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the
undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperaturedependent
resistivity. The electrical resistivity of the doped samples was two orders of magnitude
lower than that of the undoped sample. The presence of structural defects such asVO, mixed oxidation
states of the constituent elements, and significant amounts ofO− species make the electrical resistivity
of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped
semiconductor behavior.
Keywords:
Barium stannate / Spark plasma sintering / Point defects / Electrical resistivity / X-ray photoelectron spectroscopySource:
Materials Research Express, 2023, 10, 015901-Publisher:
- IOP Publishing Ltd
Funding / projects:
- info:eu-repo/grantAgreement/MESTD/inst-2020/200053/RS// Ministry of Education, Science and Technological Development, Republic of Serbia, Grant no. 200053 (University of Belgrade, Institute for Multidisciplinary Research) (RS-200053)
- Croatian Science Foundation project IP-2018–01–2730
- Cryogenic Centre at the Institute of Physics - KaCIF co-financed by the Croatian Government and the European Union through the European Regional Development Fund-Competitiveness and Cohesion Operational Programme (Grant No. KK.01.1.1.02.0012)
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Institut za multidisciplinarna istraživanjaTY - JOUR AU - Mitrović, Jelena AU - Rapljenović, Željko AU - Počuča-Nešić, Milica AU - Ivek, Tomislav AU - Branković, Zorica AU - Branković, Goran PY - 2023 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/2013 AB - The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x=0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperaturedependent resistivity. The electrical resistivity of the doped samples was two orders of magnitude lower than that of the undoped sample. The presence of structural defects such asVO, mixed oxidation states of the constituent elements, and significant amounts ofO− species make the electrical resistivity of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped semiconductor behavior. PB - IOP Publishing Ltd T2 - Materials Research Express T1 - The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate SP - 015901 VL - 10 DO - https://doi.org/10.1088/2053-1591/acb3b0 ER -
@article{ author = "Mitrović, Jelena and Rapljenović, Željko and Počuča-Nešić, Milica and Ivek, Tomislav and Branković, Zorica and Branković, Goran", year = "2023", abstract = "The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x=0.00 and 0.08) ceramic samples on their electrical properties was investigated in the temperature range of 300–4K. X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperaturedependent resistivity. The electrical resistivity of the doped samples was two orders of magnitude lower than that of the undoped sample. The presence of structural defects such asVO, mixed oxidation states of the constituent elements, and significant amounts ofO− species make the electrical resistivity of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped semiconductor behavior.", publisher = "IOP Publishing Ltd", journal = "Materials Research Express", title = "The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate", pages = "015901", volume = "10", doi = "https://doi.org/10.1088/2053-1591/acb3b0" }
Mitrović, J., Rapljenović, Ž., Počuča-Nešić, M., Ivek, T., Branković, Z.,& Branković, G.. (2023). The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate. in Materials Research Express IOP Publishing Ltd., 10, 015901. https://doi.org/https://doi.org/10.1088/2053-1591/acb3b0
Mitrović J, Rapljenović Ž, Počuča-Nešić M, Ivek T, Branković Z, Branković G. The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate. in Materials Research Express. 2023;10:015901. doi:https://doi.org/10.1088/2053-1591/acb3b0 .
Mitrović, Jelena, Rapljenović, Željko, Počuča-Nešić, Milica, Ivek, Tomislav, Branković, Zorica, Branković, Goran, "The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate" in Materials Research Express, 10 (2023):015901, https://doi.org/https://doi.org/10.1088/2053-1591/acb3b0 . .