Претраживање
Приказ резултата 1-1 од 1
Relaxor behavior of Barium Bismuth Titanate
(Joint Workshop of the COST MP0904 Action, 12 August, 2010, Edinburgh, United Kingdom, Programme and book of abstracts, p 25, 2010)
Bi-based Aurivillius family of compounds have received considerable attention as the materials for ferroelectric random access memory (FRAM) because of their low operating voltage, fast switching speed, large remnant ...