Приказ основних података о документу

dc.creatorLi, Z.Z.
dc.creatorJovanović, Vladimir P.
dc.creatorRaffy, H.
dc.creatorMegtert, S.
dc.date.accessioned2023-04-12T11:49:58Z
dc.date.available2023-04-12T11:49:58Z
dc.date.issued2009
dc.identifier.issn0921-4534
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/1896
dc.description.abstractSingle-phase, c-axis oriented, e-doped, Sr1−xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in situ reduction process was conducted on a series of films deposited on both type of substrates. On the other hand, an ex situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.sr
dc.language.isoensr
dc.publisherElsevier B.V.sr
dc.relationE.C., contract no. MEST-CT-2004- 514307sr
dc.rightsclosedAccesssr
dc.sourcePhysica C: Superconductivitysr
dc.subjecthigh Tc thin filmssr
dc.subjecte-doped cupratessr
dc.subjectsuperconducting–insulating transitionsr
dc.titleInfluence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin filmssr
dc.typearticlesr
dc.rights.licenseARRsr
dc.citation.epage81
dc.citation.issue2-3
dc.citation.spage73
dc.citation.volume469
dc.identifier.doi10.1016/j.physc.2008.11.006
dc.type.versionpublishedVersionsr


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Приказ основних података о документу