Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films
Abstract
Single-phase, c-axis oriented, e-doped, Sr1−xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in situ reduction process was conducted on a series of films deposited on both type of substrates. On the other hand, an ex situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.
Keywords:
high Tc thin films / e-doped cuprates / superconducting–insulating transitionSource:
Physica C: Superconductivity, 2009, 469, 2-3, 73-81Publisher:
- Elsevier B.V.
Funding / projects:
- E.C., contract no. MEST-CT-2004- 514307
Collections
Institution/Community
Institut za multidisciplinarna istraživanjaTY - JOUR AU - Li, Z.Z. AU - Jovanović, Vladimir AU - Raffy, H. AU - Megtert, S. PY - 2009 UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/1896 AB - Single-phase, c-axis oriented, e-doped, Sr1−xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in situ reduction process was conducted on a series of films deposited on both type of substrates. On the other hand, an ex situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed. PB - Elsevier B.V. T2 - Physica C: Superconductivity T1 - Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films EP - 81 IS - 2-3 SP - 73 VL - 469 DO - 10.1016/j.physc.2008.11.006 ER -
@article{ author = "Li, Z.Z. and Jovanović, Vladimir and Raffy, H. and Megtert, S.", year = "2009", abstract = "Single-phase, c-axis oriented, e-doped, Sr1−xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in situ reduction process was conducted on a series of films deposited on both type of substrates. On the other hand, an ex situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.", publisher = "Elsevier B.V.", journal = "Physica C: Superconductivity", title = "Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films", pages = "81-73", number = "2-3", volume = "469", doi = "10.1016/j.physc.2008.11.006" }
Li, Z.Z., Jovanović, V., Raffy, H.,& Megtert, S.. (2009). Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films. in Physica C: Superconductivity Elsevier B.V.., 469(2-3), 73-81. https://doi.org/10.1016/j.physc.2008.11.006
Li Z, Jovanović V, Raffy H, Megtert S. Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films. in Physica C: Superconductivity. 2009;469(2-3):73-81. doi:10.1016/j.physc.2008.11.006 .
Li, Z.Z., Jovanović, Vladimir, Raffy, H., Megtert, S., "Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1−xLaxCuO2 thin films" in Physica C: Superconductivity, 469, no. 2-3 (2009):73-81, https://doi.org/10.1016/j.physc.2008.11.006 . .