Приказ основних података о документу

dc.creatorBranković, Goran
dc.creatorBranković, Zorica
dc.creatorLeite, Daniela Russo
dc.creatorVarela, JA
dc.date.accessioned2022-04-05T14:09:42Z
dc.date.available2022-04-05T14:09:42Z
dc.date.issued2006
dc.identifier.issn0022-2461
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/172
dc.description.abstractFractal dimensions of grain boundary region in doped SnO2 ceramics were determined based on previously derived fractal model. This model considers fractal dimension as a measure of homogeneity of distribution of charge carriers. Application of the derived fractal model enables calculation of fractal dimension using results of impedance spectroscopy. The model was verified by experimentally determined temperature dependence of the fractal dimension of SnO2 ceramics. Obtained results confirm that the non-Debye response of the grain boundary region is connected with distribution of defects and consequently with a homogeneity of a distribution of the charge carriers. Also, it was found that C-T-1 function has maximum at temperature at which the change in dominant type of defects takes place. This effect could be considered as a third-order transition.en
dc.publisherSpringer, New York
dc.rightsrestrictedAccess
dc.sourceJournal of Materials Science
dc.subjectfractals
dc.subjectgrain boundaries
dc.subjectvaristors
dc.titleTemperature dependence of fractal dimension of grain boundary region in SnO2 based ceramicsen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage6197
dc.citation.issue19
dc.citation.other41(19): 6193-6197
dc.citation.rankM22
dc.citation.spage6193
dc.citation.volume41
dc.identifier.doi10.1007/s10853-006-0361-8
dc.identifier.scopus2-s2.0-34548547251
dc.identifier.wos000241379600001
dc.type.versionpublishedVersion


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