Based on the experimental and theoretical signals of an open photoacoustic cell operating with modulation frequencies from 20Hz to 20kHz, a significant contribution of photogenerated excess carriers on the thermal and thermoelastic responses of an n-type silicon plate is observed for the very first time. This is achieved by comparing the measured amplitude and phase of the photoacoustic signal with their corresponding theoretical thermoelastic counterparts, for high enough modulation frequencies mainly. It is shown that the amplitude of the thermoelastic component of plasma-thin samples varies about two orders of magnitude with respect to the corresponding one of plasma-thick samples. Furthermore, we find a maximal temperature difference Delta T=-35nK between the illuminated and non-illuminated sample surfaces, which shows that thin silicon plates with excess carriers could be used as heat sinks.
TY - JOUR
AU - Markushev, D. K.
AU - Markushev, D. D.
AU - Aleksic, S. M.
AU - Pantic, D. S.
AU - Galović, S. P.
AU - Todorović, D. M.
AU - Ordonez-Miranda, J.
PY - 2020
UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/1313
AB - Based on the experimental and theoretical signals of an open photoacoustic cell operating with modulation frequencies from 20Hz to 20kHz, a significant contribution of photogenerated excess carriers on the thermal and thermoelastic responses of an n-type silicon plate is observed for the very first time. This is achieved by comparing the measured amplitude and phase of the photoacoustic signal with their corresponding theoretical thermoelastic counterparts, for high enough modulation frequencies mainly. It is shown that the amplitude of the thermoelastic component of plasma-thin samples varies about two orders of magnitude with respect to the corresponding one of plasma-thick samples. Furthermore, we find a maximal temperature difference Delta T=-35nK between the illuminated and non-illuminated sample surfaces, which shows that thin silicon plates with excess carriers could be used as heat sinks.
PB - Amer Inst Physics, Melville
T2 - Journal of Applied Physics
T1 - Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon
IS - 9
VL - 128
DO - 10.1063/5.0015657
ER -
@article{
author = "Markushev, D. K. and Markushev, D. D. and Aleksic, S. M. and Pantic, D. S. and Galović, S. P. and Todorović, D. M. and Ordonez-Miranda, J.",
year = "2020",
abstract = "Based on the experimental and theoretical signals of an open photoacoustic cell operating with modulation frequencies from 20Hz to 20kHz, a significant contribution of photogenerated excess carriers on the thermal and thermoelastic responses of an n-type silicon plate is observed for the very first time. This is achieved by comparing the measured amplitude and phase of the photoacoustic signal with their corresponding theoretical thermoelastic counterparts, for high enough modulation frequencies mainly. It is shown that the amplitude of the thermoelastic component of plasma-thin samples varies about two orders of magnitude with respect to the corresponding one of plasma-thick samples. Furthermore, we find a maximal temperature difference Delta T=-35nK between the illuminated and non-illuminated sample surfaces, which shows that thin silicon plates with excess carriers could be used as heat sinks.",
publisher = "Amer Inst Physics, Melville",
journal = "Journal of Applied Physics",
title = "Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon",
number = "9",
volume = "128",
doi = "10.1063/5.0015657"
}
Markushev, D. K., Markushev, D. D., Aleksic, S. M., Pantic, D. S., Galović, S. P., Todorović, D. M.,& Ordonez-Miranda, J.. (2020). Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon. in Journal of Applied Physics
Amer Inst Physics, Melville., 128(9).
https://doi.org/10.1063/5.0015657
Markushev DK, Markushev DD, Aleksic SM, Pantic DS, Galović SP, Todorović DM, Ordonez-Miranda J. Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon. in Journal of Applied Physics. 2020;128(9).
doi:10.1063/5.0015657 .
Markushev, D. K., Markushev, D. D., Aleksic, S. M., Pantic, D. S., Galović, S. P., Todorović, D. M., Ordonez-Miranda, J., "Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon" in Journal of Applied Physics, 128, no. 9 (2020),
https://doi.org/10.1063/5.0015657 . .
