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dc.creatorVukmirović, Jelena
dc.creatorNesterović, Andrea
dc.creatorStijepović, Ivan
dc.creatorMilanović, Marija
dc.creatorOmerović, Nejra
dc.creatorBajac, Branimir
dc.creatorBobić, Jelena
dc.creatorSrdic, Vladimir V.
dc.date.accessioned2022-04-05T15:20:20Z
dc.date.available2022-04-05T15:20:20Z
dc.date.issued2019
dc.identifier.issn0957-4522
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/1227
dc.description.abstractIn this paper the fabrication of BaTiO3-based thin film heterostructures with ring silver electrodes by low cost deposition techniques was investigated. BaTiO3, Ba1-xSrxTiO3 (x = 0.1, 0.2, 0.3, 0.4) and BaTi1-xZrxO3 (x = 0.1, 0.2) thin films for potential application in microwave technologies were prepared by chemical solution deposition method on Pt-coated silicon substrates and sintered at different temperatures. The prepared films were examined by SEM, AFM, XRD and Raman spectroscopy in order to study the influence of dopants on microstructure and phase changes. Dielectric and ferroelectric properties of the doped BaTiO3 thin films were also investigated to find the optimal composition and structure for tunable application. Complex shaped silver electrodes suitable for measurements of tunability at GHz frequencies were prepared by inkjet printing method. The electrodes with circular shape were printed on the surface of BaTiO3 based thin films by Dimatix inkjet printer. Precision limits of the method and the influence of printing conditions on electrode size and quality were also investigated.en
dc.publisherSpringer, Dordrecht
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45021/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Materials Science-Materials in Electronics
dc.subjectThin films
dc.subjectSolution deposition
dc.subjectInkjet printing
dc.subjectFerroelectric properties
dc.titleFabrication of BaTiO3-based thin film heterostructures with ring electrodes by low cost deposition techniquesen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage15004
dc.citation.issue16
dc.citation.other30(16): 14995-15004
dc.citation.rankM22
dc.citation.spage14995
dc.citation.volume30
dc.identifier.doi10.1007/s10854-019-01872-2
dc.identifier.scopus2-s2.0-85069950020
dc.identifier.wos000480558400019
dc.type.versionpublishedVersion


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