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dc.creatorVijatović Petrović, Mirjana
dc.creatorGrigalaitis, R.
dc.creatorIlić, Nikola
dc.creatorBobić, Jelena
dc.creatorDžunuzović, Adis
dc.creatorBanys, J.
dc.creatorStojanović, Biljana D
dc.date.accessioned2022-04-05T15:08:53Z
dc.date.available2022-04-05T15:08:53Z
dc.date.issued2017
dc.identifier.issn0925-8388
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/1058
dc.description.abstractConventional solid-state method was used to prepare powders of pure and barium titanate (BT) doped with different concentration of samarium. Influence of samarium addition on the structure modification, grain growth inhibition and microstructure development was studied. Dielectric properties of doped samples were significantly modified. With doping, a diffuse kind of ferro-para phase transition was induced, phase transitions positions were shifted and dielectric permittivity values were lowered in comparison with pure barium titanate. Detailed impedance and modulus data analysis were presented. The impedance complex plane showed two semicircular arcs for pure BT and one single depressed semicircular arc for all doped ceramics. Different electro-active regions in the modulus plane plots were also distinguish. The comparison between impedance and modulus scaling behavior presented the localized movement of charge carriers in the pure barium titanate and both, short and long range relaxations in the ceramics doped with 0.05 mol% of Sm. P-E hysteresis loops have shown the dilution of ferroelectric properties with Sm doping.en
dc.publisherElsevier Science Sa, Lausanne
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45021/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Alloys and Compounds
dc.subjectImpedance analysisen
dc.subjectFerroelectric propertiesen
dc.subjectDopingen
dc.subjectDielectric propertiesen
dc.titleInterdependence between structure and electrical characteristics in Sm-doped barium titanateen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage968
dc.citation.other724: 959-968
dc.citation.rankaM21
dc.citation.spage959
dc.citation.volume724
dc.identifier.doi10.1016/j.jallcom.2017.07.099
dc.identifier.scopus2-s2.0-85024113651
dc.identifier.wos000407848400113
dc.type.versionpublishedVersion


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