Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be similar to 2.7 eV and that for indirect transition it is similar to 1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.
Кључне речи:
UV VIS NIR spectroscopy / Thin films / Semiconductors / Photoluminescence spectroscopy / Copper selenide
Извор:
Science of Sintering, 2017, 49, 2, 167-174
Издавач:
Međunarodni Institut za nauku o sinterovanju, Beograd
TY - JOUR
AU - Petrović, Milica
AU - Gilic, Martina
AU - Ćirković, Jovana
AU - Romčević, Maja
AU - Romčević, Nebojša
AU - Trajic, Jelena
AU - Yahia, Ibrahim
PY - 2017
UR - http://rimsi.imsi.bg.ac.rs/handle/123456789/1046
AB - Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be similar to 2.7 eV and that for indirect transition it is similar to 1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.
PB - Međunarodni Institut za nauku o sinterovanju, Beograd
T2 - Science of Sintering
T1 - Optical Properties of CuSe Thin Films - Band Gap Determination
EP - 174
IS - 2
SP - 167
VL - 49
DO - 10.2298/SOS1702167P
ER -
@article{
author = "Petrović, Milica and Gilic, Martina and Ćirković, Jovana and Romčević, Maja and Romčević, Nebojša and Trajic, Jelena and Yahia, Ibrahim",
year = "2017",
abstract = "Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be similar to 2.7 eV and that for indirect transition it is similar to 1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.",
publisher = "Međunarodni Institut za nauku o sinterovanju, Beograd",
journal = "Science of Sintering",
title = "Optical Properties of CuSe Thin Films - Band Gap Determination",
pages = "174-167",
number = "2",
volume = "49",
doi = "10.2298/SOS1702167P"
}
Petrović, M., Gilic, M., Ćirković, J., Romčević, M., Romčević, N., Trajic, J.,& Yahia, I.. (2017). Optical Properties of CuSe Thin Films - Band Gap Determination. in Science of Sintering
Međunarodni Institut za nauku o sinterovanju, Beograd., 49(2), 167-174.
https://doi.org/10.2298/SOS1702167P
Petrović M, Gilic M, Ćirković J, Romčević M, Romčević N, Trajic J, Yahia I. Optical Properties of CuSe Thin Films - Band Gap Determination. in Science of Sintering. 2017;49(2):167-174.
doi:10.2298/SOS1702167P .
Petrović, Milica, Gilic, Martina, Ćirković, Jovana, Romčević, Maja, Romčević, Nebojša, Trajic, Jelena, Yahia, Ibrahim, "Optical Properties of CuSe Thin Films - Band Gap Determination" in Science of Sintering, 49, no. 2 (2017):167-174,
https://doi.org/10.2298/SOS1702167P . .
