Different behaviors in current-voltage measurements of undoped and doped Sb2S3-based solar cells

Abstract

The focus of this paper was on the different behaviors in current-voltage measurements of fabricated solar cells due to variations in scan rates (the slowest 10 mV s(-1), medium 50 mV s(-1), and the fastest 100 mV s(-1)). Three different undoped and doped antimony sulfide (Sb2S3)-based hybrids solar cells were examined under standard test conditions (1 sun) as follows: indium tin oxide glass/amorphous Sb2S3-polyaniline/TiO2/polyaniline/electrolyte/aluminum; indium tin oxide glass/p-doped Sb2S3-polyaniline/amorphous Sb2S3-polyaniline/n-doped Sb2S3-polyaniline/polyaniline/electrolyte/aluminum; and indium tin oxide glass/p-doped Sb2S3-polyaniline/aSb(2)S(3)-polyaniline/n-doped Sb2S3-polyaniline/TiO2/polyaniline/electrolyte/aluminum. Different current-voltage curves changing from inverse exponential, linear to exponential ones with different rates of measurement scans at 1 sun were recorded. The obtained results also show basic cell characteristics such as fill factor, short-circuit current, efficiency, series, and shunt resistances. The highest efficiencies of all three cells were obtained at the slowest scan rate, while values of the shunt and series resistances are in agreement with the shape of the curves. On the other hand, one example of measurement at lower light intensity (55% of sun) was given, indicating more stable cell performances and the exponential shape of current-voltage curves at all scan rates.