Приказ основних података о документу

dc.creatorSaeedabad, S. Hemmatzadeh
dc.creatorBaratto, C.
dc.creatorRigoni, F.
dc.creatorRozati, S. M.
dc.creatorSberveglieri, G.
dc.creatorVojisavljević, Katarina
dc.creatorMalic, Barbara
dc.date.accessioned2022-04-05T15:06:38Z
dc.date.available2022-04-05T15:06:38Z
dc.date.issued2017
dc.identifier.issn1369-8001
dc.identifier.urihttp://rimsi.imsi.bg.ac.rs/handle/123456789/1024
dc.description.abstractIn this work, we prepared zinc stannate (ZTO) thin films by RF sputtering starting from a sintered ceramic target with Zn:Sn ratio 2:1, by varying the argon/oxygen pressures during the deposition process. Thin films were deposited on alumina substrates at 400 degrees C, and subsequently annealed at 600 degrees C in the air. The transparency typical for the as-deposited films was preserved even after their annealing at 600 degrees C in the air, where the high temperature was crucial for the improvement of the crystalline Zn2SnO4 , ZTO phase, as confirmed by Raman measurements. Additionally, the post-deposition thermal treatment resulted in porous ZTO films suitable for gas sensing application. The structural and surface morphological properties of thin films were investigated by Raman spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX). Finally, the gas sensing properties towards nitrogen dioxide, ethanol and acetone have been tested, showing the high potentiality of this material as the gas sensor for ethanol and acetone at 400 degrees C, and nitrogen dioxide at 200 degrees C.en
dc.publisherElsevier Sci Ltd, Oxford
dc.relationSlovenian Research AgencySlovenian Research Agency - Slovenia [P2-0105]
dc.rightsrestrictedAccess
dc.sourceMaterials Science in Semiconductor Processing
dc.subjectZn2SnO4 thin filmen
dc.subjectNitrogen dioxideen
dc.subjectGas sensoren
dc.subjectEthanolen
dc.subjectAcetoneen
dc.titleGas sensing applications of the inverse spinel zinc tin oxideen
dc.typearticle
dc.rights.licenseARR
dc.citation.epage469
dc.citation.other71: 461-469
dc.citation.rankM22
dc.citation.spage461
dc.citation.volume71
dc.identifier.doi10.1016/j.mssp.2017.09.006
dc.identifier.scopus2-s2.0-85029385330
dc.identifier.wos000412963700069
dc.type.versionpublishedVersion


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Приказ основних података о документу