TY  - JOUR
AU  - Bobić, Jelena
AU  - Vijatović Petrović, Mirjana
AU  - Banys, J
AU  - Stojanović, Biljana D
PY  - 2012
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/615
AB  - BaBi4Ti4-5/4xNbxO15 (BBNTx, x = 0.0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20-777 degrees C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T-c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of similar to 204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of sigma(DC) was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively.
PB  - Pergamon-Elsevier Science Ltd, Oxford
T2  - Materials Research Bulletin
T1  - Electrical properties of niobium doped barium bismuth-titanate ceramics
EP  - 1880
IS  - 8
SP  - 1874
VL  - 47
DO  - 10.1016/j.materresbull.2012.04.069
ER  - 

@article{
author = "Bobić, Jelena and Vijatović Petrović, Mirjana and Banys, J and Stojanović, Biljana D",
year = "2012",
abstract = "BaBi4Ti4-5/4xNbxO15 (BBNTx, x = 0.0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20-777 degrees C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences T-c decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of similar to 204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of sigma(DC) was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively.",
publisher = "Pergamon-Elsevier Science Ltd, Oxford",
journal = "Materials Research Bulletin",
title = "Electrical properties of niobium doped barium bismuth-titanate ceramics",
pages = "1880-1874",
number = "8",
volume = "47",
doi = "10.1016/j.materresbull.2012.04.069"
}

Bobić, J., Vijatović Petrović, M., Banys, J.,& Stojanović, B. D.. (2012). Electrical properties of niobium doped barium bismuth-titanate ceramics. in Materials Research Bulletin
Pergamon-Elsevier Science Ltd, Oxford., 47(8), 1874-1880.
https://doi.org/10.1016/j.materresbull.2012.04.069

Bobić J, Vijatović Petrović M, Banys J, Stojanović BD. Electrical properties of niobium doped barium bismuth-titanate ceramics. in Materials Research Bulletin. 2012;47(8):1874-1880.
doi:10.1016/j.materresbull.2012.04.069 .

Bobić, Jelena, Vijatović Petrović, Mirjana, Banys, J, Stojanović, Biljana D, "Electrical properties of niobium doped barium bismuth-titanate ceramics" in Materials Research Bulletin, 47, no. 8 (2012):1874-1880,
https://doi.org/10.1016/j.materresbull.2012.04.069 . .