TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, K.M.
AU  - Zachariadis, G
AU  - Valasiadis, O
AU  - Zorba, T.T.
AU  - Vujatović, Stevan S
AU  - Nikolić, Nenad
AU  - Aleksić, Obrad
AU  - Ivetić, Tamara B.
AU  - Cvetković, Olga G
AU  - Blagojević, Vladimir D
AU  - Nikolić, Maria Vesna
PY  - 2012
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/507
AB  - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
PB  - Springer, New York
T2  - Journal of Materials Science
T1  - Far infrared study of local impurity modes of Boron-doped PbTe
EP  - 2389
IS  - 5
SP  - 2384
VL  - 47
DO  - 10.1007/s10853-011-6057-8
ER  - 

@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, K.M. and Zachariadis, G and Valasiadis, O and Zorba, T.T. and Vujatović, Stevan S and Nikolić, Nenad and Aleksić, Obrad and Ivetić, Tamara B. and Cvetković, Olga G and Blagojević, Vladimir D and Nikolić, Maria Vesna",
year = "2012",
abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.",
publisher = "Springer, New York",
journal = "Journal of Materials Science",
title = "Far infrared study of local impurity modes of Boron-doped PbTe",
pages = "2389-2384",
number = "5",
volume = "47",
doi = "10.1007/s10853-011-6057-8"
}

Nikolić, P. M., Paraskevopoulos, K.M., Zachariadis, G., Valasiadis, O., Zorba, T.T., Vujatović, S. S., Nikolić, N., Aleksić, O., Ivetić, T. B., Cvetković, O. G., Blagojević, V. D.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science
Springer, New York., 47(5), 2384-2389.
https://doi.org/10.1007/s10853-011-6057-8

Nikolić PM, Paraskevopoulos K, Zachariadis G, Valasiadis O, Zorba T, Vujatović SS, Nikolić N, Aleksić O, Ivetić TB, Cvetković OG, Blagojević VD, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389.
doi:10.1007/s10853-011-6057-8 .

Nikolić, Pantelija M., Paraskevopoulos, K.M., Zachariadis, G, Valasiadis, O, Zorba, T.T., Vujatović, Stevan S, Nikolić, Nenad, Aleksić, Obrad, Ivetić, Tamara B., Cvetković, Olga G, Blagojević, Vladimir D, Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389,
https://doi.org/10.1007/s10853-011-6057-8 . .