Amorphous and Nanostructural Chalcogenides [141026B]

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Amorphous and Nanostructural Chalcogenides [141026B]

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Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics

Slankamenac, Milos P; Ivetić, Tamara B.; Nikolić, Maria Vesna; Ivetic, N; Živanov, Milos B; Pavlović, Vladimir B

(Springer, New York, 2010)

TY  - JOUR
AU  - Slankamenac, Milos P
AU  - Ivetić, Tamara B.
AU  - Nikolić, Maria Vesna
AU  - Ivetic, N
AU  - Živanov, Milos B
AU  - Pavlović, Vladimir B
PY  - 2010
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/392
AB  - Impedance/admittance and dielectric spectroscopy were used to investigate the effect of temperature on the electrical response of liquid-phase sintered Zn2SnO4-SnO2 ceramics. The measurements were performed over a wide frequency range (100 Hz to 10 MHz) at different temperatures. The real and the imaginary part of the complex impedance traced semicircles in the complex plane. The resistance and the capacitance of bulk and grain-boundary regions were determined by modeling the experimental results using several equivalent circuits taking into account bulk deep trap states. Admittance complex diagrams were also determined in order to understand better the conduction mechanisms occurring in the polycrystalline Zn2SnO4-SnO2 system.
PB  - Springer, New York
T2  - Journal of Electronic Materials
T1  - Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics
EP  - 455
IS  - 4
SP  - 447
VL  - 39
DO  - 10.1007/s11664-010-1118-3
ER  - 
@article{
author = "Slankamenac, Milos P and Ivetić, Tamara B. and Nikolić, Maria Vesna and Ivetic, N and Živanov, Milos B and Pavlović, Vladimir B",
year = "2010",
abstract = "Impedance/admittance and dielectric spectroscopy were used to investigate the effect of temperature on the electrical response of liquid-phase sintered Zn2SnO4-SnO2 ceramics. The measurements were performed over a wide frequency range (100 Hz to 10 MHz) at different temperatures. The real and the imaginary part of the complex impedance traced semicircles in the complex plane. The resistance and the capacitance of bulk and grain-boundary regions were determined by modeling the experimental results using several equivalent circuits taking into account bulk deep trap states. Admittance complex diagrams were also determined in order to understand better the conduction mechanisms occurring in the polycrystalline Zn2SnO4-SnO2 system.",
publisher = "Springer, New York",
journal = "Journal of Electronic Materials",
title = "Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics",
pages = "455-447",
number = "4",
volume = "39",
doi = "10.1007/s11664-010-1118-3"
}
Slankamenac, M. P., Ivetić, T. B., Nikolić, M. V., Ivetic, N., Živanov, M. B.,& Pavlović, V. B.. (2010). Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics. in Journal of Electronic Materials
Springer, New York., 39(4), 447-455.
https://doi.org/10.1007/s11664-010-1118-3
Slankamenac MP, Ivetić TB, Nikolić MV, Ivetic N, Živanov MB, Pavlović VB. Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics. in Journal of Electronic Materials. 2010;39(4):447-455.
doi:10.1007/s11664-010-1118-3 .
Slankamenac, Milos P, Ivetić, Tamara B., Nikolić, Maria Vesna, Ivetic, N, Živanov, Milos B, Pavlović, Vladimir B, "Impedance Response and Dielectric Relaxation in Liquid-Phase Sintered Zn2SnO4-SnO2 Ceramics" in Journal of Electronic Materials, 39, no. 4 (2010):447-455,
https://doi.org/10.1007/s11664-010-1118-3 . .
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