TY  - JOUR
AU  - Campa, Andrej
AU  - Berginc, Marko
AU  - Vojisavljević, Katarina
AU  - Malic, Barbara
AU  - Panjan, Peter
AU  - Topic, Marko
PY  - 2017
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/1033
AB  - In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.
PB  - Elsevier Science Sa, Lausanne
T2  - Thin Solid Films
T1  - Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications
EP  - 57
SP  - 52
VL  - 621
DO  - 10.1016/j.tsf.2016.11.028
ER  - 

@article{
author = "Campa, Andrej and Berginc, Marko and Vojisavljević, Katarina and Malic, Barbara and Panjan, Peter and Topic, Marko",
year = "2017",
abstract = "In optoelectronic and photovoltaic devices, transparent conductive oxides are important in establishing a good electrical contact while minimizing optical losses over a broad range of wavelengths (400-1200 nm). To date, research has focused on In2O3- SnO2 (ITO) films. In this paper, we report on a study of Ga-doped ITO (GITO) films, which in contrast to standard ITO 90/10 (i.e. In:Sn = 90:10) films contain less In. Initially, we describe the development of a multicomponent Ga-In-Sn oxide target with a Ga:In:Sn ratio of 4:64:32, which was used in a radio frequency sputtering system to deposit GITO thin films on glass substrates. Furthermore, we describe the microstructural/structural (scanning electron microscopy and X-ray diffraction spectroscopy), optical (wavelength dependent complex refractive indices) and electrical (resistivity, mobility, free carrier density) measurements used to optimize sputtering conditions and post-annealing processing. As well as achieving an optimized/improved GITO thin film deposited at high substrate and annealing temperatures, we obtained promising thin GITO films with excellent optical properties and with relatively low resistivity (1.7 m Omega cm) deposited and annealed at temperatures around 200 degrees C.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Thin Solid Films",
title = "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications",
pages = "57-52",
volume = "621",
doi = "10.1016/j.tsf.2016.11.028"
}

Campa, A., Berginc, M., Vojisavljević, K., Malic, B., Panjan, P.,& Topic, M.. (2017). Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films
Elsevier Science Sa, Lausanne., 621, 52-57.
https://doi.org/10.1016/j.tsf.2016.11.028

Campa A, Berginc M, Vojisavljević K, Malic B, Panjan P, Topic M. Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications. in Thin Solid Films. 2017;621:52-57.
doi:10.1016/j.tsf.2016.11.028 .

Campa, Andrej, Berginc, Marko, Vojisavljević, Katarina, Malic, Barbara, Panjan, Peter, Topic, Marko, "Optical and electrical properties of gallium doped indium tin oxide optimized for low deposition temperature applications" in Thin Solid Films, 621 (2017):52-57,
https://doi.org/10.1016/j.tsf.2016.11.028 . .

TY  - CONF
AU  - Berginc, Marko
AU  - Campa, Andrej
AU  - Vojisavljević, Katarina
AU  - Malic, Barbara
AU  - Panjan, Peter
AU  - Topic, Marko
PY  - 2015
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/913
AB  - A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The layers deposited under optimized conditions were then post-annealed at different temperatures (200 - 500 degrees C) either in the air or in nitrogen atmosphere in order to further improve the conductivity. The deposited 200 nm thick GITO layer has high electron mobility (50 cm(2)/Vs) at relatively low resistivity (0.90 m Omega cm) although the free electron concentration is kept low (1.4x10(20) cm(-3)) to prevent excessive free-carrier absorption. Thus, high transmission of the layer (similar to 80% at 400 - 1500 nm) is obtained.
PB  - Elsevier Science Bv, Amsterdam
C3  - Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct
T1  - Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide
EP  - 189
SP  - 183
VL  - 84
DO  - 10.1016/j.egypro.2015.12.312
ER  - 

@conference{
author = "Berginc, Marko and Campa, Andrej and Vojisavljević, Katarina and Malic, Barbara and Panjan, Peter and Topic, Marko",
year = "2015",
abstract = "A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The layers deposited under optimized conditions were then post-annealed at different temperatures (200 - 500 degrees C) either in the air or in nitrogen atmosphere in order to further improve the conductivity. The deposited 200 nm thick GITO layer has high electron mobility (50 cm(2)/Vs) at relatively low resistivity (0.90 m Omega cm) although the free electron concentration is kept low (1.4x10(20) cm(-3)) to prevent excessive free-carrier absorption. Thus, high transmission of the layer (similar to 80% at 400 - 1500 nm) is obtained.",
publisher = "Elsevier Science Bv, Amsterdam",
journal = "Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct",
title = "Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide",
pages = "189-183",
volume = "84",
doi = "10.1016/j.egypro.2015.12.312"
}

Berginc, M., Campa, A., Vojisavljević, K., Malic, B., Panjan, P.,& Topic, M.. (2015). Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide. in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct
Elsevier Science Bv, Amsterdam., 84, 183-189.
https://doi.org/10.1016/j.egypro.2015.12.312

Berginc M, Campa A, Vojisavljević K, Malic B, Panjan P, Topic M. Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide. in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct. 2015;84:183-189.
doi:10.1016/j.egypro.2015.12.312 .

Berginc, Marko, Campa, Andrej, Vojisavljević, Katarina, Malic, Barbara, Panjan, Peter, Topic, Marko, "Relation between sputtering parameters and optical and electrical properties of Ga doped ITO transparent conductive oxide" in Proceedings of the Emrs 2015 Spring Meeting - Symposium C on Advanced Inorganic Materials and Struct, 84 (2015):183-189,
https://doi.org/10.1016/j.egypro.2015.12.312 . .