TY  - GEN
AU  - Mitrović, Jelena
AU  - Počuča-Nešić, Milica
AU  - Malešević, Aleksandar
AU  - Branković, Zorica
AU  - Vojisavljević, Katarina
AU  - Savić, Slavica
AU  - Ribić, Vesna
AU  - Drev, Sandra
AU  - Podlogar, Matejka
AU  - Bernik, Slavko
AU  - Rapljenović, Željko
AU  - Ivek, Tomislav
AU  - Branković, Goran
PY  - 2023
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2085
AB  - The non-magnetic, non-inductive electroconductive materials with linear current-voltage characteristic and low and almost constant electrical resistivity in the wide temperature range could be used in conditions unfavorable for metals and alloys. Particular emphasis is placed on the performance and endurance of these materials in conditions at constant high voltage, current, and energy, as well as operating in acidic and humid environmental conditions.
The aim of this work was to investigate the influence of antimony concentration and sintering parameters on the structure, microstructure, and electrical properties of antimony-doped barium stannate, BaSn1-xSbxO3 (BSSO, x = 0,00; 0,04; 0,06; 0,08 and 0,10) to obtain conductive electroceramic samples with linear current-voltage (I- U) characteristics and low electrical resistivity. For this purpose three different sintering techniques were used: conventional, spark plasma and cold sintering.
According to the X-ray diffraction (XRD) analysis, single-phase ceramic mater- ials with cubic BaSnO3 structure were obtained by conventional sintering at 1600 °C for 3 h and spark plasma sintering at 1100 °C for 5 min. Raising the spark plasma sintering temperature to 1200 °C induced the formation of Ba-rich secondary phase, Ba2SnO4. XRD analysis confirmed the presence of unreacted SnO2 and BaCO3 in cold sintered BaSn0.92Sb0.08O3 sample (310 °C for 5 min, 20 wt.% 1 M acetic acid). Scanning electron microscopy (SEM) indicates a significant decrease in grain size upon doping, regardless of the sintering technique. High-resolution transmission electron microscopy (HRTEM) revealed the presence of low angle grain boundaries (LAGBs) in conventionally and spark plasma sintered (1200 °C for 5 min) samples with x = 0.08. The results of electrical measurements confirmed the semiconducting properties of all BSSO, except the spark plasma sintered BaSn0.92Sb0.08O3 (1200 °C for 5 min) sample. This sample showed linear current-voltage characteristic, the lowest and almost constant electrical resistivity in the temperature range of 25–150
°C resulting from the loss of potential barriers at grain boundaries due to the large fraction of LAGBs present in BaSn0.92Sb0.08O3 ceramic sample.
PB  - University of Belgrade, Institute for Multidisciplinary Research
T2  - 7th Conference of the Serbian Society for Ceramic Materials, 7CSCS-2023, June 14-16, 2023, Belgrade, Serbia
T1  - Correlation between the microstructure and electrical properties of Sb-doped BaSnO3 ceramics
SP  - 36
UR  - https://hdl.handle.net/21.15107/rcub_rimsi_2085
ER  - 

@misc{
author = "Mitrović, Jelena and Počuča-Nešić, Milica and Malešević, Aleksandar and Branković, Zorica and Vojisavljević, Katarina and Savić, Slavica and Ribić, Vesna and Drev, Sandra and Podlogar, Matejka and Bernik, Slavko and Rapljenović, Željko and Ivek, Tomislav and Branković, Goran",
year = "2023",
abstract = "The non-magnetic, non-inductive electroconductive materials with linear current-voltage characteristic and low and almost constant electrical resistivity in the wide temperature range could be used in conditions unfavorable for metals and alloys. Particular emphasis is placed on the performance and endurance of these materials in conditions at constant high voltage, current, and energy, as well as operating in acidic and humid environmental conditions.
The aim of this work was to investigate the influence of antimony concentration and sintering parameters on the structure, microstructure, and electrical properties of antimony-doped barium stannate, BaSn1-xSbxO3 (BSSO, x = 0,00; 0,04; 0,06; 0,08 and 0,10) to obtain conductive electroceramic samples with linear current-voltage (I- U) characteristics and low electrical resistivity. For this purpose three different sintering techniques were used: conventional, spark plasma and cold sintering.
According to the X-ray diffraction (XRD) analysis, single-phase ceramic mater- ials with cubic BaSnO3 structure were obtained by conventional sintering at 1600 °C for 3 h and spark plasma sintering at 1100 °C for 5 min. Raising the spark plasma sintering temperature to 1200 °C induced the formation of Ba-rich secondary phase, Ba2SnO4. XRD analysis confirmed the presence of unreacted SnO2 and BaCO3 in cold sintered BaSn0.92Sb0.08O3 sample (310 °C for 5 min, 20 wt.% 1 M acetic acid). Scanning electron microscopy (SEM) indicates a significant decrease in grain size upon doping, regardless of the sintering technique. High-resolution transmission electron microscopy (HRTEM) revealed the presence of low angle grain boundaries (LAGBs) in conventionally and spark plasma sintered (1200 °C for 5 min) samples with x = 0.08. The results of electrical measurements confirmed the semiconducting properties of all BSSO, except the spark plasma sintered BaSn0.92Sb0.08O3 (1200 °C for 5 min) sample. This sample showed linear current-voltage characteristic, the lowest and almost constant electrical resistivity in the temperature range of 25–150
°C resulting from the loss of potential barriers at grain boundaries due to the large fraction of LAGBs present in BaSn0.92Sb0.08O3 ceramic sample.",
publisher = "University of Belgrade, Institute for Multidisciplinary Research",
journal = "7th Conference of the Serbian Society for Ceramic Materials, 7CSCS-2023, June 14-16, 2023, Belgrade, Serbia",
title = "Correlation between the microstructure and electrical properties of Sb-doped BaSnO3 ceramics",
pages = "36",
url = "https://hdl.handle.net/21.15107/rcub_rimsi_2085"
}

Mitrović, J., Počuča-Nešić, M., Malešević, A., Branković, Z., Vojisavljević, K., Savić, S., Ribić, V., Drev, S., Podlogar, M., Bernik, S., Rapljenović, Ž., Ivek, T.,& Branković, G.. (2023). Correlation between the microstructure and electrical properties of Sb-doped BaSnO3 ceramics. in 7th Conference of the Serbian Society for Ceramic Materials, 7CSCS-2023, June 14-16, 2023, Belgrade, Serbia
University of Belgrade, Institute for Multidisciplinary Research., 36.
https://hdl.handle.net/21.15107/rcub_rimsi_2085

Mitrović J, Počuča-Nešić M, Malešević A, Branković Z, Vojisavljević K, Savić S, Ribić V, Drev S, Podlogar M, Bernik S, Rapljenović Ž, Ivek T, Branković G. Correlation between the microstructure and electrical properties of Sb-doped BaSnO3 ceramics. in 7th Conference of the Serbian Society for Ceramic Materials, 7CSCS-2023, June 14-16, 2023, Belgrade, Serbia. 2023;:36.
https://hdl.handle.net/21.15107/rcub_rimsi_2085 .

Mitrović, Jelena, Počuča-Nešić, Milica, Malešević, Aleksandar, Branković, Zorica, Vojisavljević, Katarina, Savić, Slavica, Ribić, Vesna, Drev, Sandra, Podlogar, Matejka, Bernik, Slavko, Rapljenović, Željko, Ivek, Tomislav, Branković, Goran, "Correlation between the microstructure and electrical properties of Sb-doped BaSnO3 ceramics" in 7th Conference of the Serbian Society for Ceramic Materials, 7CSCS-2023, June 14-16, 2023, Belgrade, Serbia (2023):36,
https://hdl.handle.net/21.15107/rcub_rimsi_2085 .

TY  - CONF
AU  - Vukašinović, Jelena
AU  - Počuča-Nešić, Milica
AU  - Luković Golić, Danijela
AU  - Ribić, Vesna
AU  - Branković, Zorica
AU  - Dapčević, Aleksandra
AU  - Bernik, Slavko
AU  - Branković, Goran
PY  - 2019
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2071
AB  - BaSnO3 (BSO) belongs to the perovskite-type oxides with a cubic crystal structure. It
exhibits interesting electrical, optical and photocatalytic properties. BSO has a potential
application as transparent conductor, gas sensor, photocatalyst or dielectric capacitor. It is
an insulating material with wide band gap (Eg = 3.1–3.4 eV), but its electrical properties
can be adjusted by doping with aliovalent cations.
In this work, we investigated the influence of antimony (Sb3+), as a dopant, on crystal
structure, microstructural and electrical properties of BSO ceramics. Stoichiometric
mixture of powders BaCO3, SnO2 and Sb2O3 was mechanochemically activated in a
planetary ball mill and afterwards calcined at 900 ºC for 4 h. As-prepared powders were
sintered by spark plasma sintering technique (1200 ºC for 5 min) in order to produce
ceramic samples BaSn1-xSbxO3 (x = 0.00, 0.04, 0.06, 0.08 and 0.10). All samples were
characterized using X-ray Diffraction (XRD) analysis, High Resolution Transmission
(HRTEM) and Field Emission Electron Microscopy (FESEM). Electrical conductivity of
BaSn1-xSbxO3 ceramics was determined by measuring of the current-voltage (I–U)
characteristics in different mediums and at different temperatures.
XRD analysis confirmed the existence of cubic BSO, as a dominant phase, and
tetragonal Ba2SnO4, as a secondary phase. FESEM analysis revealed homogenous
microstructure in all samples and noticeable decrease of the grain size in doped samples
compared to BSO. HRTEM micrographs of the undoped sample showed less ordered
microstructure with amorphous phase in the grain boundary region. Doped samples
revealed much higher crystallinity, especially in the grain boundary regions without
presence of defects. Low angle grain boundaries (LAGB) are observed (the angle equals
2.08°) on the HRTEM micrographs of BaSn0.92Sb0.08O3. It was observed that all doped
samples are n-type semiconductors, having linear I–U characteristics up to 150 °C.
Sample BaSn0.92Sb0.08O3 showed the highest conductivity, most likely due to the presence
of the LAGB, which allow easier charge carrier transfer between grains and greater
carrier mobility [1].
[1] Y. Furushima, A. Nakamura, E. Tochigi, Y. Ikuhara, K. Toyoura, K. Matsunaga, J.
Appl. Phys., 120 (2016) 1421071–1421079.
PB  - Serbian Crystallographic Society
C3  - 26th Conference of the Serbian Crystallographic Society, June 27-28, 2019, Silver Lake, Serbia
T1  - Structural, microstructural and electrical properties of Sb-doped BaSnO3 ceramics
EP  - 73
SP  - 72
UR  - https://hdl.handle.net/21.15107/rcub_rimsi_2071
ER  - 

@conference{
author = "Vukašinović, Jelena and Počuča-Nešić, Milica and Luković Golić, Danijela and Ribić, Vesna and Branković, Zorica and Dapčević, Aleksandra and Bernik, Slavko and Branković, Goran",
year = "2019",
abstract = "BaSnO3 (BSO) belongs to the perovskite-type oxides with a cubic crystal structure. It
exhibits interesting electrical, optical and photocatalytic properties. BSO has a potential
application as transparent conductor, gas sensor, photocatalyst or dielectric capacitor. It is
an insulating material with wide band gap (Eg = 3.1–3.4 eV), but its electrical properties
can be adjusted by doping with aliovalent cations.
In this work, we investigated the influence of antimony (Sb3+), as a dopant, on crystal
structure, microstructural and electrical properties of BSO ceramics. Stoichiometric
mixture of powders BaCO3, SnO2 and Sb2O3 was mechanochemically activated in a
planetary ball mill and afterwards calcined at 900 ºC for 4 h. As-prepared powders were
sintered by spark plasma sintering technique (1200 ºC for 5 min) in order to produce
ceramic samples BaSn1-xSbxO3 (x = 0.00, 0.04, 0.06, 0.08 and 0.10). All samples were
characterized using X-ray Diffraction (XRD) analysis, High Resolution Transmission
(HRTEM) and Field Emission Electron Microscopy (FESEM). Electrical conductivity of
BaSn1-xSbxO3 ceramics was determined by measuring of the current-voltage (I–U)
characteristics in different mediums and at different temperatures.
XRD analysis confirmed the existence of cubic BSO, as a dominant phase, and
tetragonal Ba2SnO4, as a secondary phase. FESEM analysis revealed homogenous
microstructure in all samples and noticeable decrease of the grain size in doped samples
compared to BSO. HRTEM micrographs of the undoped sample showed less ordered
microstructure with amorphous phase in the grain boundary region. Doped samples
revealed much higher crystallinity, especially in the grain boundary regions without
presence of defects. Low angle grain boundaries (LAGB) are observed (the angle equals
2.08°) on the HRTEM micrographs of BaSn0.92Sb0.08O3. It was observed that all doped
samples are n-type semiconductors, having linear I–U characteristics up to 150 °C.
Sample BaSn0.92Sb0.08O3 showed the highest conductivity, most likely due to the presence
of the LAGB, which allow easier charge carrier transfer between grains and greater
carrier mobility [1].
[1] Y. Furushima, A. Nakamura, E. Tochigi, Y. Ikuhara, K. Toyoura, K. Matsunaga, J.
Appl. Phys., 120 (2016) 1421071–1421079.",
publisher = "Serbian Crystallographic Society",
journal = "26th Conference of the Serbian Crystallographic Society, June 27-28, 2019, Silver Lake, Serbia",
title = "Structural, microstructural and electrical properties of Sb-doped BaSnO3 ceramics",
pages = "73-72",
url = "https://hdl.handle.net/21.15107/rcub_rimsi_2071"
}

Vukašinović, J., Počuča-Nešić, M., Luković Golić, D., Ribić, V., Branković, Z., Dapčević, A., Bernik, S.,& Branković, G.. (2019). Structural, microstructural and electrical properties of Sb-doped BaSnO3 ceramics. in 26th Conference of the Serbian Crystallographic Society, June 27-28, 2019, Silver Lake, Serbia
Serbian Crystallographic Society., 72-73.
https://hdl.handle.net/21.15107/rcub_rimsi_2071

Vukašinović J, Počuča-Nešić M, Luković Golić D, Ribić V, Branković Z, Dapčević A, Bernik S, Branković G. Structural, microstructural and electrical properties of Sb-doped BaSnO3 ceramics. in 26th Conference of the Serbian Crystallographic Society, June 27-28, 2019, Silver Lake, Serbia. 2019;:72-73.
https://hdl.handle.net/21.15107/rcub_rimsi_2071 .

Vukašinović, Jelena, Počuča-Nešić, Milica, Luković Golić, Danijela, Ribić, Vesna, Branković, Zorica, Dapčević, Aleksandra, Bernik, Slavko, Branković, Goran, "Structural, microstructural and electrical properties of Sb-doped BaSnO3 ceramics" in 26th Conference of the Serbian Crystallographic Society, June 27-28, 2019, Silver Lake, Serbia (2019):72-73,
https://hdl.handle.net/21.15107/rcub_rimsi_2071 .

TY  - CONF
AU  - Ribić, Vesna
AU  - Dapčević, Aleksandra
AU  - Skorodumova, Natalia
AU  - Rečnik, Aleksander
AU  - Luković Golić, Danijela
AU  - Branković, Goran
PY  - 2018
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2404
PB  - epcc, Edinburgh, UK
C3  - HPC–Europa Transnational Access Meeting (TAM 2018)
T1  - DFT screening of Gd as a dopant in the BiFeO3 superlattice
UR  - https://hdl.handle.net/21.15107/rcub_rimsi_2404
ER  - 

@conference{
author = "Ribić, Vesna and Dapčević, Aleksandra and Skorodumova, Natalia and Rečnik, Aleksander and Luković Golić, Danijela and Branković, Goran",
year = "2018",
publisher = "epcc, Edinburgh, UK",
journal = "HPC–Europa Transnational Access Meeting (TAM 2018)",
title = "DFT screening of Gd as a dopant in the BiFeO3 superlattice",
url = "https://hdl.handle.net/21.15107/rcub_rimsi_2404"
}

Ribić, V., Dapčević, A., Skorodumova, N., Rečnik, A., Luković Golić, D.,& Branković, G.. (2018). DFT screening of Gd as a dopant in the BiFeO3 superlattice. in HPC–Europa Transnational Access Meeting (TAM 2018)
epcc, Edinburgh, UK..
https://hdl.handle.net/21.15107/rcub_rimsi_2404

Ribić V, Dapčević A, Skorodumova N, Rečnik A, Luković Golić D, Branković G. DFT screening of Gd as a dopant in the BiFeO3 superlattice. in HPC–Europa Transnational Access Meeting (TAM 2018). 2018;.
https://hdl.handle.net/21.15107/rcub_rimsi_2404 .

Ribić, Vesna, Dapčević, Aleksandra, Skorodumova, Natalia, Rečnik, Aleksander, Luković Golić, Danijela, Branković, Goran, "DFT screening of Gd as a dopant in the BiFeO3 superlattice" in HPC–Europa Transnational Access Meeting (TAM 2018) (2018),
https://hdl.handle.net/21.15107/rcub_rimsi_2404 .

TY  - CONF
AU  - Ribić, Vesna
AU  - Rečnik, Aleksander
AU  - Dražić, Goran
AU  - Komelj, Matej
AU  - kokalj, Anton
AU  - Podlogar, Matejka
AU  - Daneu, Nina
AU  - Bernik, Slavko
AU  - Radošević, Tina
AU  - Luković Golić, Danijela
AU  - Branković, Zorica
AU  - Branković, Goran
PY  - 2017
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2463
AB  - Various dopants are known to produce inversion boundaries (IBs) in ZnO, causing polarity inversion across the interface. These are found either in basal or pyramidal planes and can be of head-to-head or tail-to-tail configuration with respect to the orientation of the polar c-axis. The dopants, known to produce IBs in ZnO are: In2O3, Fe2O3, Mn2O3, Ga2O3, SiO2, SnO2, TiO2 and Sb2O3. While some of IBs have been studied in detail, many IB structures remain unresolved. In our study we investigated structure and chemistry of basal plane inversion boundaries in SnO2-doped ZnO. The formation of IBs in this system was first reported by Daneu et al. (2000)1 and using high-resolution transmission electron microscopy the same group attempted to solve structure and chemistry of Sn-rich IBs.2 Implementing an innovative analytical approach based on acquiring multiple EDS spectra with concentric electron probes they showed that Sn4+ ions do not occupy the full IB layer, but rather one half of the layer. This suggested an average oxidation state of III+ for the cations comprising the IB plane. Based on electron micro-diffraction and HRTEM study Daneu et al.1,2 reported that Sn-rich IBs are head-to-head oriented with interfacial cations located in trigonal prismatic sites, however, the exact atomic arrangement of Sn along IB has not been determined. To identify the translation state and atomic arrangement on Sn-rich IBs in ZnO we performed quantitative HRTEM and HAADF-STEM analysis of SnO2-doped ZnO/Bi2O3 ceramics. IBs in ZnO grains were observed for two low-index orientations, [100] and [120], to obtain a 3D information on the translation state of the IB plane. The coordination site of interfacial cations was shown to be octahedral.
472
Translation obtained from images is compared with three different, so far known, types of the head-to-head IB translations with octahedral coordination of cations at IB-plane: (i) IB with stacking of the cation sublattice, as observed with Sb doping, (ii) IB with, as observed with In and Fe doping and (iii) IB with as observed with Mn doping. For Sn-doped ZnO translations turned out to be (ii) , the same as the one occurring in In- and Fe-doped ZnO. Based on experimental observations of local atomic arrangement, HRTEM and HAADF-STEM image simulations were performed for two different in-plane distributions of Sn and Zn atoms, to better understand experimental image contrast on IBs. The generated models will be further used for ab-initio calculations aimed at determining the electronic structure of IBs.
PB  - Ruđer Bošković Institute and Croatian Microscopy Society, Rovinj (Croatia)
C3  - 13th Multinational Congress on Microscopy, Rovinj, Croatia, 2017
T1  - TEM study of basal-plane inversion boundaries in Sn‐Doped ZnO
SP  - 471
UR  - https://hdl.handle.net/21.15107/rcub_rimsi_2463
ER  - 

@conference{
author = "Ribić, Vesna and Rečnik, Aleksander and Dražić, Goran and Komelj, Matej and kokalj, Anton and Podlogar, Matejka and Daneu, Nina and Bernik, Slavko and Radošević, Tina and Luković Golić, Danijela and Branković, Zorica and Branković, Goran",
year = "2017",
abstract = "Various dopants are known to produce inversion boundaries (IBs) in ZnO, causing polarity inversion across the interface. These are found either in basal or pyramidal planes and can be of head-to-head or tail-to-tail configuration with respect to the orientation of the polar c-axis. The dopants, known to produce IBs in ZnO are: In2O3, Fe2O3, Mn2O3, Ga2O3, SiO2, SnO2, TiO2 and Sb2O3. While some of IBs have been studied in detail, many IB structures remain unresolved. In our study we investigated structure and chemistry of basal plane inversion boundaries in SnO2-doped ZnO. The formation of IBs in this system was first reported by Daneu et al. (2000)1 and using high-resolution transmission electron microscopy the same group attempted to solve structure and chemistry of Sn-rich IBs.2 Implementing an innovative analytical approach based on acquiring multiple EDS spectra with concentric electron probes they showed that Sn4+ ions do not occupy the full IB layer, but rather one half of the layer. This suggested an average oxidation state of III+ for the cations comprising the IB plane. Based on electron micro-diffraction and HRTEM study Daneu et al.1,2 reported that Sn-rich IBs are head-to-head oriented with interfacial cations located in trigonal prismatic sites, however, the exact atomic arrangement of Sn along IB has not been determined. To identify the translation state and atomic arrangement on Sn-rich IBs in ZnO we performed quantitative HRTEM and HAADF-STEM analysis of SnO2-doped ZnO/Bi2O3 ceramics. IBs in ZnO grains were observed for two low-index orientations, [100] and [120], to obtain a 3D information on the translation state of the IB plane. The coordination site of interfacial cations was shown to be octahedral.
472
Translation obtained from images is compared with three different, so far known, types of the head-to-head IB translations with octahedral coordination of cations at IB-plane: (i) IB with stacking of the cation sublattice, as observed with Sb doping, (ii) IB with, as observed with In and Fe doping and (iii) IB with as observed with Mn doping. For Sn-doped ZnO translations turned out to be (ii) , the same as the one occurring in In- and Fe-doped ZnO. Based on experimental observations of local atomic arrangement, HRTEM and HAADF-STEM image simulations were performed for two different in-plane distributions of Sn and Zn atoms, to better understand experimental image contrast on IBs. The generated models will be further used for ab-initio calculations aimed at determining the electronic structure of IBs.",
publisher = "Ruđer Bošković Institute and Croatian Microscopy Society, Rovinj (Croatia)",
journal = "13th Multinational Congress on Microscopy, Rovinj, Croatia, 2017",
title = "TEM study of basal-plane inversion boundaries in Sn‐Doped ZnO",
pages = "471",
url = "https://hdl.handle.net/21.15107/rcub_rimsi_2463"
}

Ribić, V., Rečnik, A., Dražić, G., Komelj, M., kokalj, A., Podlogar, M., Daneu, N., Bernik, S., Radošević, T., Luković Golić, D., Branković, Z.,& Branković, G.. (2017). TEM study of basal-plane inversion boundaries in Sn‐Doped ZnO. in 13th Multinational Congress on Microscopy, Rovinj, Croatia, 2017
Ruđer Bošković Institute and Croatian Microscopy Society, Rovinj (Croatia)., 471.
https://hdl.handle.net/21.15107/rcub_rimsi_2463

Ribić V, Rečnik A, Dražić G, Komelj M, kokalj A, Podlogar M, Daneu N, Bernik S, Radošević T, Luković Golić D, Branković Z, Branković G. TEM study of basal-plane inversion boundaries in Sn‐Doped ZnO. in 13th Multinational Congress on Microscopy, Rovinj, Croatia, 2017. 2017;:471.
https://hdl.handle.net/21.15107/rcub_rimsi_2463 .

Ribić, Vesna, Rečnik, Aleksander, Dražić, Goran, Komelj, Matej, kokalj, Anton, Podlogar, Matejka, Daneu, Nina, Bernik, Slavko, Radošević, Tina, Luković Golić, Danijela, Branković, Zorica, Branković, Goran, "TEM study of basal-plane inversion boundaries in Sn‐Doped ZnO" in 13th Multinational Congress on Microscopy, Rovinj, Croatia, 2017 (2017):471,
https://hdl.handle.net/21.15107/rcub_rimsi_2463 .