TY  - JOUR
AU  - Mitrović, Jelena
AU  - Rapljenović, Željko
AU  - Počuča-Nešić, Milica
AU  - Ivek, Tomislav
AU  - Branković, Zorica
AU  - Branković, Goran
PY  - 2023
UR  - http://rimsi.imsi.bg.ac.rs/handle/123456789/2013
AB  - The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x=0.00 and 0.08)
ceramic samples on their electrical properties was investigated in the temperature range of 300–4K.
X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen
vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the
undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperaturedependent
resistivity. The electrical resistivity of the doped samples was two orders of magnitude
lower than that of the undoped sample. The presence of structural defects such asVO, mixed oxidation
states of the constituent elements, and significant amounts ofO− species make the electrical resistivity
of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped
semiconductor behavior.
PB  - IOP Publishing Ltd
T2  - Materials Research Express
T1  - The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate
SP  - 015901
VL  - 10
DO  - https://doi.org/10.1088/2053-1591/acb3b0
ER  - 

@article{
author = "Mitrović, Jelena and Rapljenović, Željko and Počuča-Nešić, Milica and Ivek, Tomislav and Branković, Zorica and Branković, Goran",
year = "2023",
abstract = "The influence of structural defects in spark plasma sintered BaSn1-xSbxO3 (BSSO, x=0.00 and 0.08)
ceramic samples on their electrical properties was investigated in the temperature range of 300–4K.
X-ray photoelectron spectroscopy (XPS) revealed the presence of point defects, primarily oxygen
vacancies (VO) and mixed oxidation states of tin (Sn2+/Sn4+) in both samples. As a result, the
undoped BSSO sample exibited a non-standard semiconductor behavior, retaining its temperaturedependent
resistivity. The electrical resistivity of the doped samples was two orders of magnitude
lower than that of the undoped sample. The presence of structural defects such asVO, mixed oxidation
states of the constituent elements, and significant amounts ofO− species make the electrical resistivity
of the doped sample constant in the temperature range of 300–70 K, indicating heavily-doped
semiconductor behavior.",
publisher = "IOP Publishing Ltd",
journal = "Materials Research Express",
title = "The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate",
pages = "015901",
volume = "10",
doi = "https://doi.org/10.1088/2053-1591/acb3b0"
}

Mitrović, J., Rapljenović, Ž., Počuča-Nešić, M., Ivek, T., Branković, Z.,& Branković, G.. (2023). The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate. in Materials Research Express
IOP Publishing Ltd., 10, 015901.
https://doi.org/https://doi.org/10.1088/2053-1591/acb3b0

Mitrović J, Rapljenović Ž, Počuča-Nešić M, Ivek T, Branković Z, Branković G. The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate. in Materials Research Express. 2023;10:015901.
doi:https://doi.org/10.1088/2053-1591/acb3b0 .

Mitrović, Jelena, Rapljenović, Željko, Počuča-Nešić, Milica, Ivek, Tomislav, Branković, Zorica, Branković, Goran, "The crucial role of defect structure in understanding the electrical properties of spark plasma sintered antimony doped barium stannate" in Materials Research Express, 10 (2023):015901,
https://doi.org/https://doi.org/10.1088/2053-1591/acb3b0 . .